參數(shù)資料
型號: DBB10E
文件頁數(shù): 1/2頁
文件大?。?/td> 40K
代理商: DBB10E
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number:EN1061D
DBB10
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
52098HA (KT)/62096GI (KOTO)/6038TA/5202KI, TS No.1061-1/2
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
B
0
1
B
B
D
E
0
1
B
B
D
G
0
1
B
B
D
t
U
e
g
e
C
t
e
C
a
V
d
e
s
v
e
R
w
r
F
e
e
R
g
k
a
a
v
g
S
e
P
A
VM
R
IO
I
S
F
j
g
T
0
0
1
0
0
4
0
0
6
0
3
V
A
A
t
e
d
e
M
e
y
c
1
,
v
a
w
e
n
z
H
0
5
0
e
p
e
p
m
m
e
e
T
T
n
e
o
n
a
S
u
J
0
0
5
5
1
1
g
+
o
0
4
Features
· Plastic molded structure.
· Peak reverse voltage:V
RM
=100 to 600V.
· Average rectified current:I
O
=1.0A.
Package Dimensions
unit:mm
1112
[DBB10]
C
C
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C, per constituent element of bridge
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
m
e
g
t
a
V
e
C
d
w
s
v
r
F
e
R
VF
IR
IF
VM
R
A
t
5
=
0
1
V
A
μ
e
h
c
a
e
A
:
VM
R
0
相關(guān)PDF資料
PDF描述
DBB10G
DBC10 1A Single-Phase Bridge Rectifier
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DBC10E
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