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參數(shù)資料
| 型號(hào)： | DBB10G |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | DBB10G |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number:EN1061D
DBB10
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
52098HA (KT)/62096GI (KOTO)/6038TA/5202KI, TS No.1061-1/2
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Features
· Plastic molded structure.
· Peak reverse voltage:V
RM
=100 to 600V.
· Average rectified current:I
O
=1.0A.
Package Dimensions
unit:mm
1112
[DBB10]
C
C
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C, per constituent element of bridge
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