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參數(shù)資料
| 型號(hào)： | DAC8248HS |
| 廠商： | PRECISION MONOLITHICS INC |
| 元件分類： | DAC |
| 英文描述： | Dual 12-Bit 8-Bit Byte Double-Buffered CMOS D/A Converter |
| 中文描述： | 12-BIT DAC, PDSO24 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 350K |
| 代理商： | DAC8248HS |
DAC8248
–4–
REV. B
ORDE RING GUIDE
1
Relative
Accuracy
(+5 V or +15 V)
Gain E rror
(+5 V or +15 V)
T emperature
Range
Package
Description
Model
DAC8248AW
2
DAC8248EW
DAC8248GP
DAC8248FW
DAC8248HP
DAC8248FP
DAC8248HS
3
±
1/2 LSB
±
1/2 LSB
±
1/2 LSB
±
1 LSB
±
1 LSB
±
1 LSB
±
1 LSB
±
1 LSB
±
1 LSB
±
2 LSB
±
4 LSB
±
4 LSB
±
4 LSB
±
4 LSB
–55
°
C to +125
°
C
–40
°
C to +85
°
C
0
°
C to +70
°
C
–40
°
C to +85
°
C
0
°
C to +70
°
C
–40
°
C to +85
°
C
0
°
C to +70
°
C
24-Pin Cerdip
24-Pin Cerdip
24-Pin Plastic DIP
24-Pin Cerdip
24-Pin Plastic DIP
24-Pin Plastic DIP
24-Pin SOL
NOT ES
1
Burn-in is available on commercial and industrial temperature range parts in cerdip, plastic DIP, and T O-can packages.
2
For devices processed in total compliance to MIL-ST D-883, add/883 after part number. Consult factory for 883 data sheet.
3
For availability and burn-in information on SO and PLCC packages, contact your local sales office.
(continued from page 1)
operates on a single supply from +5 V to +15 V, and it dissi-
pates less than 0.5 mW at +5 V (using zero or V
DD
logic levels).
T he device is packaged in a space-saving 0.3", 24-pin DIP.
T he DAC8248 is manufactured with PMI’s highly stable thin-
film resistors on an advanced oxide-isolated, silicon-gate,
CMOS technology. PMI’s improved latch-up resistant design
eliminates the need for external protective Schottky diodes.
ABSOLUT E MAX IMUM RAT INGS
(T
A
= +25
°
C, unless otherwise noted.)
V
DD
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V, +17 V
V
DD
to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V, +17 V
AGND to DGND . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
+0.3 V
Digital Input Voltage to DGND . . . . . . . –0.3 V, V
DD
+0.3 V
I
OUT A
, I
OUT B
to AGND . . . . . . . . . . . . . . –0.3 V, V
DD
+0.3 V
V
REF A
, V
REF B
to AGND . . . . . . . . . . . . . . . . . . . . . . . .
±
25 V
V
RFB A
, V
RFB B
to AGND . . . . . . . . . . . . . . . . . . . . . . . .
±
25 V
Operating T emperature Range
AW Version . . . . . . . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
EW, FW, FP Versions . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
GP, HP, HS Versions . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Junction T emperature . . . . . . . . . . . . . . . . . . . . . . . . +150
°
C
Storage T emperature . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Lead T emperature (Soldering, 60 sec) . . . . . . . . . . . . +300
°
C
Package T ype
u
JA1
u
JC
Units
24-Pin Hermetic DIP (W)
24-Pin Plastic DIP (P)
24-Pin SOL (S)
69
62
72
10
32
24
°
C/W
°
C/W
°
C/W
NOT E
1
u
specified for worst case mounting conditions, i.e.,
u
is specified for device in
socket for cerdip and P-DIP packages;
u
JA
is specified for device soldered to printed
circuit board for SOL package.
C AUT ION
1. Do not apply voltages higher than V
DD
or less than GND
potential on any terminal except V
REF
and R
FB
.
2. T he digital control inputs are Zener-protected; however,
permanent damage may occur on unprotected units from
high energy electrostatic fields. K eep units in conductive
foam at all times until ready to use.
3. Do not insert this device into powered sockets; remove
power before insertion or removal.
4. Use proper antistatic handling procedures.
5. Devices can suffer permanent damage and/or reliability deg-
radation if stressed above the limits listed under Absolute
Maximum Ratings for extended periods. T his is a stress rat-
ing only and functional operation at or above this specifica-
tion is not implied.
WARNING!
ESD SENSITIVE DEVICE
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the DAC8248 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
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