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參數(shù)資料
| 型號(hào)： | D882SS |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | D882SS |
UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R206-018,A
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to B772SS
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
MARKING
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Ta=25
°
C ,unless otherwise specified )
PARAMETERS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation( Tc=25
°
C)
Collector dissipation( Ta=25
°
C)
Collector current(DC)
Collector current(PULSE)
Base current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
DC current gain(note 1)
h
FE1
h
FE2
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
V
BE
(sat)
Current gain bandwidth product
Output capacitance
Cob
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Pc
Ic
Ic
I
B
T
j
T
STG
RATING
40
30
5
10
1
3
7
0.6
150
-55 ~ +150
UNIT
V
V
V
W
W
A
A
A
°
C
°
C
TEST CONDITIONS
V
CB
=30V,I
E
=0
V
EB
=3V,Ic=0
V
CE
=2V,Ic=20mA
V
CE
=2V,Ic=1A
Ic=2A,I
B
=0.2A
Ic=2A,I
B
=0.2A
V
CE
=5V,Ic=0.1A
V
CB
=10V,I
E
=0,f=1MHz
MIN
30
100
TYP
200
150
0.3
1.0
80
45
MAX
1000
1000
400
0.5
2.0
UNIT
nA
nA
V
V
f
T
MHz
pF
D82
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D882SS_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| D882SSG-X-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| D882SSL-X-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| D882SS-X-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| D882-TO-126 | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR（ NPN ） |
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