參數(shù)資料
型號(hào): D2282UK
英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(750W-6V-1GHz,單端式))
中文描述: 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管(750瓦到6V - 1GHz的,單端)(鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管(750瓦到6V - 1GHz的,單端式))
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 18K
代理商: D2282UK
LAB
SEME
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/96
D2282UK
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
2W
40V
±20V
400mA
–65 to 125°C
150°C
MECHANICAL DATA
Dimensions in mm.
6.7
6.3
3.1
2.9
3.7
3.3
7.3
6.7
4.60
2.30
1.05
0.85
0.80
0.60
1
2
3
4
13
0.10
0.02
0.32
0.24
16
m
a
x
.
1.70
m
a
x
.
10
m
a
x
.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW – 6V – 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE (Typical < 2dB NF)
HIGH GAIN – 8dB MINIMUM
SURFACE MOUNT
SOT–223
PIN 1
GATE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
DRAIN
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
METAL GATE RF SILICON FET
TetraFET
相關(guān)PDF資料
PDF描述
D2282UK METAL GATE RF SILICON FET
D2293UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(10W-12.5V-500MHz,單端式))
D2293 METAL GATE RF SILICON FET
D2293UK METAL GATE RF SILICON FET
D2294UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(15W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(15W-12.5V-500MHz,單端式))
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