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參數(shù)資料
| 型號： | D2254UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(10W-12.5V-1GHz,推拉式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（功率10W - 12.5V - 1GHz的，推挽式）（鍍金多用的DMOS射頻硅場效應管（功率10W - 12.5V - 1GHz的，推拉式）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | D2254UK |
D2254UK
Prelim. 9/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
40
2
2
7
1
0.36
10
40
20:1
24
20
2
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 0.4A
P
O
= 10W
V
DS
= 12.5V
f = 1GHz
I
DQ
= 0.4A
V
DS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
THj–case
Thermal Resistance Junction – Case
Max. 6.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
￡
2%
TOTAL DEVICE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
h
VSWR
C
iss
C
oss
C
rss
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| D2282UK | METAL GATE RF SILICON FET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| D2256UK | 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET |
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| D225E | 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP Single & Dual Output DC/DC Converters |
| D225EI | 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP High Isolation DC/DC Converters |
| D225ERW | 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, Miniature 2W SIP, Wide Input DC/DC Con vert ers |
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