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參數(shù)資料
| 型號(hào)： | D2232UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-7.2V-850MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(5W-7.2V-850MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管（號(hào)5W - 7.2V - 850MHz頻段，單端）（鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管（號(hào)5W - 7.2V - 850MHz頻段，單端式）） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 16K |
| 代理商： | D2232UK |
D2232UK
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 5/99
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 5W
V
DS
= 7.2V
f = 850MHz
V
DS
= 0V
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.8A
I
DQ
= 0.4A
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
40
1
4
7
0.5
0.72
7
50
20:1
48
40
4
R
THj–case
Thermal Resistance Junction – Case
Max. 6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
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