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參數(shù)資料
| 型號： | D2232UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-7.2V-850MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(5W-7.2V-850MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（號5W - 7.2V - 850MHz頻段，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（號5W - 7.2V - 850MHz頻段，單端式）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | D2232UK |
D2232UK
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Prelim. 5/99
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
40V
±20V
8A
–65 to 150°C
200°C
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 7.2V – 850MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND
APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
MECHANICAL DATA
Dimensions in mm.
1
2
3
4
3.00
2 PL.
2.07
2 PL.
2 PL.
0.47
0.47
2 PL.
0.10
TYP.
0.381
1.65
2 PL.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
1.27
1.27
0.10 R.
TYP.
0.10
TYP.
6.50 ±
0.15
0.3 R.
1.27
0.80
4 PL.
4.90 ± 0.15
8
7
6
5
0.508
0.360
± 0.005
2.313
± 0.2
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
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