參數(shù)資料
型號(hào)： D2219
廠商： TT electronics Semelab Limited
英文描述： METAL GATE RF SILICON FET
中文描述： 金屬門射頻硅場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 16K
代理商： D2219
D2219UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 2.5W
V
DS
= 12.5V
f = 1GHz
V
DS
= 0V
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.2A
I
DQ
= 0.1A
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
40
1
1
7
0.5
0.18
10
40
20:1
12
10
1
R
THj–case
Thermal Resistance Junction – Case
Max. 10°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
相關(guān)PDF資料
PDF描述
D2219UK METAL GATE RF SILICON FET
D2220UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(5W-12.5V-1GHz,單端式))
D2220UK METAL GATE RF SILICON FET
D2221UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(7.5W-12.5V-1GHz,單端式))
D2221UK METAL GATE RF SILICON FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
D2219UK 制造商:TT Electronics/ Semelab 功能描述:MOSFETRFN CHSE12V2.5W1GHZSO8 制造商:TT Electronics/ Semelab 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8 制造商:TT ELECTRONICS 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltag 制造商:TT electronics plc 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltag 制造商:TT Electronics/ Semelab 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltage Vds:40V, Continuous Drain Current Id:2A, Power Dissipation Pd:17.5W, Operating Frequency Min:1MHz, Operating Frequency Max:1GHz, No. of Pins:8, MSL:- , RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET
D221E 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP Single & Dual Output DC/DC Converters
D221ED 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Very Low Cost, 2W SIP Dual Isolated Output DC/DC Converters
D221EI 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP High Isolation DC/DC Converters
D221ERW 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, Miniature 2W SIP, Wide Input DC/DC Con vert ers
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