參數資料
型號： D2219
廠商： TT electronics Semelab Limited
英文描述： METAL GATE RF SILICON FET
中文描述： 金屬門射頻硅場效應管
文件頁數： 1/2頁
文件大小： 16K
代理商： D2219
D2219UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
17.5W
40V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
8
7
6
5
M
N
B
C
A
E
F
G
D
H
K
L
J
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
2.5W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
0.76
0.030
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
METAL GATE RF SILICON FET
TetraFET
相關PDF資料
PDF描述
D2219UK METAL GATE RF SILICON FET
D2220UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(5W-12.5V-1GHz,單端式))
D2220UK METAL GATE RF SILICON FET
D2221UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(7.5W-12.5V-1GHz,單端式))
D2221UK METAL GATE RF SILICON FET
相關代理商/技術參數
參數描述
D2219UK 制造商:TT Electronics/ Semelab 功能描述:MOSFETRFN CHSE12V2.5W1GHZSO8 制造商:TT Electronics/ Semelab 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8 制造商:TT ELECTRONICS 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltag 制造商:TT electronics plc 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltag 制造商:TT Electronics/ Semelab 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltage Vds:40V, Continuous Drain Current Id:2A, Power Dissipation Pd:17.5W, Operating Frequency Min:1MHz, Operating Frequency Max:1GHz, No. of Pins:8, MSL:- , RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET
D221E 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP Single & Dual Output DC/DC Converters
D221ED 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Very Low Cost, 2W SIP Dual Isolated Output DC/DC Converters
D221EI 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP High Isolation DC/DC Converters
D221ERW 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, Miniature 2W SIP, Wide Input DC/DC Con vert ers
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