參數(shù)資料
型號： D2218UK
英文描述： Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-12.5V-1GHz,單端式))
中文描述： 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（20瓦- 12.5V - 1GHz的，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（20瓦- 12.5V - 1GHz的，單端式））
文件頁數(shù)： 2/2頁
文件大小： 17K
代理商： D2218UK
D2218UK
9/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 20W
V
DS
= 12.5V
f = 1GHz
V
DS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.8A
I
DQ
= 1.6A
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
h
40
8
8
7
0.5
1.44
10
40
20:1
96
80
8
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 2.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
￡
2%
相關(guān)PDF資料
PDF描述
D2218UK CAT6 SOL PC PVC WHI 50FT PVC SOLID PATCH CORD
D2219UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(2.5W-12.5V-1GHz,單端式))
D2219 METAL GATE RF SILICON FET
D2219UK METAL GATE RF SILICON FET
D2220UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(5W-12.5V-1GHz,單端式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
D2219 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET
D2219UK 制造商:TT Electronics/ Semelab 功能描述:MOSFETRFN CHSE12V2.5W1GHZSO8 制造商:TT Electronics/ Semelab 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8 制造商:TT ELECTRONICS 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltag 制造商:TT electronics plc 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltag 制造商:TT Electronics/ Semelab 功能描述:MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8, Transistor Type:RF FET, Drain Source Voltage Vds:40V, Continuous Drain Current Id:2A, Power Dissipation Pd:17.5W, Operating Frequency Min:1MHz, Operating Frequency Max:1GHz, No. of Pins:8, MSL:- , RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET
D221E 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP Single & Dual Output DC/DC Converters
D221ED 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Very Low Cost, 2W SIP Dual Isolated Output DC/DC Converters
D221EI 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP High Isolation DC/DC Converters
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*