參數(shù)資料
型號: D2201
廠商: TT electronics Semelab Limited
英文描述: METAL GATE RF SILICON FET
中文描述: 金屬門射頻硅場效應(yīng)管
文件頁數(shù): 4/5頁
文件大?。?/td> 275K
代理商: D2201
N
Umschwingdiode
Crow Bar Diode
Datenblatt / Data sheet
D 2201N
BIP AC / SM PB 2003-05-27, Schneider / Keller
4/5
Seite/page
R,t – Werte
R
R,T-Werte
Analytische Elemente des transienten Wrmewiderstandes Z
thJC
Analytical elements of transient thermal impedance Z
thJC
Pos. n
1
2
3
4
5
6
7
R
thn
[°C/W]
0,00349
0,00373
0,00155
0,00093
0,0003
beidseitig
two-sided
τ
n
[s]
0,89646
0,11809
0,02822
0,00422
0,0013
R
thn
[°C/W]
0,0105
0,00039
0,00462
0,00116
0,00063
anodenseitg
anode-sided
τ
n
[s]
4,84218
0,25267
0,08834
0,00932
0,00185
R
thn
[°C/W]
0,01737
0,00024
0,00426
0,0013
0,00093
kathodenseitig
cathode-sided
τ
n
[s]
4,65326
0,74468
0,11266
0,02136
0,00359
Analytische Funktion / Analytical function:
Σ
n=1
=
τ
n
thn
thJC
n
-t
e
1
R
Z
Transienter innerer Wrmewiderstand für DC/ Transient thermal impedance Z
thJC
= f(t) for DC
Beidseitige Kühlung / Two-sided cooling
Anodenseitige Kühlung / Anode-sided cooling
Kathodenseitige Kühlung / Cathode-sided cooling
相關(guān)PDF資料
PDF描述
D2201UK METAL GATE RF SILICON FET
D2201UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(2.5W-12.5V-1GHz,單端式))
D2029UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(2.5W-28V-1GHz,單端式))
D2029UK METAL GATE RF SILICON FET
D2202UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(5W-12.5V-1GHz,單端式))
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