參數(shù)資料
型號(hào): D2201UK
廠商: SEMELAB LTD
元件分類(lèi): 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CERAMIC, DP, 2 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 275K
代理商: D2201UK
N
Umschwingdiode
Crow Bar Diode
Datenblatt / Data sheet
D 2201N
BIP AC / SM PB 2003-05-27, Schneider / Keller
1/5
Seite/page
repetitive peak reverse voltages
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Rückwrts-Spitzensperrspannung
T
vj
= -40°C... T
vj max
V
RRM
4500
V
V
Periodische Rückwrts-Spitzensperrspannung
repetitive peak reverse voltages
V
RRM
4600
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
I
FRMSM
5050 A
Dauergrenzstrom
average on-state current
T
C
= 100 °C
T
C
= 60 °C
I
FAVM
2570
3220
A
A
Stostrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
38000
35000
A
A
Grenzlastintegral
I2t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I2t
7220
6125
103 A2s
103 A2s
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
F
= 2500 A
v
F
typ.
max.
1,17
1,2
V
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
typ.
max.
0,657
0,688
V
V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
typ.
max.
0,206
0,205
m
m
A 0,701472
B 6,918E-06
C -0,0473315
D 0,016473
A 0,698898
B -1,5974E-5
C -0,044108
D 0,01774
max.
typ.
Durchlakennlinie 300A
i
F
2500A
on-state characteristic
T
vj
= T
vj max
max.
Rückwrts-Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
i
R
100 mA
prepared by: C. Schneider
date of publication:
2003-06-27
approved by: R. Keller
revision:
4
T
T
T
F
i
D
i
Ln
C
i
B
A
v
+
+
+
+
=
)
(
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