- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376513 > D2081UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(750mW-12V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(750mW-12V-1GHz,單端式)) PDF資料下載
參數(shù)資料
| 型號： | D2081UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(750mW-12V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(750mW-12V-1GHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（750mW - 12V的- 1GHz的，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（750mW - 12V的- 1GHz的，單端式）） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 25K |
| 代理商： | D2081UK |
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
D2081UK
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
Test Conditions
Min.
Typ.
Max.
Unit
65
1
1
7
1
0.18
11
40
10:1
12
6
0.5
V
GS
= 0
|
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 750mW
V
DS
= 12V
f = 1GHz
V
DS
= 0V
V
DS
= 28V V
GS
= 0
V
DS
= 28V V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.2A
I
DQ
= 75mA
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
mhos
dB
%
—
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
R
THj–case
Thermal Resistance Junction – Case
Max. 70°C / W
THERMAL DATA
S Parameters at V
d
= 12V, I
d
= 75mA
S11
S12
mag
ang
mag
0.47
-95
0.04
0.46
-120
0.05
0.47
-131
0.07
0.49
-146
0.10
0.51
-156
0.15
0.53
-163
0.20
0.54
-180
0.25
0.55
178
0.29
0.56
175
0.34
0.57
163
0.40
0.58
150
0.45
0.60
144
0.48
0.60
140
0.52
0.59
130
0.55
0.58
123
0.58
0.56
115
0.60
0.54
110
0.62
0.51
108
0.62
Freq
MHz
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
S21
S22
ang
50
80
100
110
110
104
100
96
91
85
80
75
70
66
63
58
54
50
mag
5.20
4.40
3.50
3.00
2.60
2.30
2.10
1.80
1.60
1.40
1.30
1.20
1.10
1.00
0.95
0.90
0.90
0.90
ang
90
76
68
59
51
45
40
36
33
28
26
24
22
21
20
19
20
20
mag
0.32
0.35
0.38
0.43
0.48
0.54
0.58
0.60
0.63
0.65
0.66
0.66
0.66
0.65
0.65
0.64
0.64
0.63
ang
-90
-91
-94
-98
-103
-108
-112
-116
-120
-126
-129
-133
-135
-138
-140
-142
-144
-145
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D2081UK | METAL GATE RF SILICON FET |
| D2082UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-1GHz)(鍍金多用DMOS射頻硅場效應(yīng)管(40W-28V-1GHz)) |
| D2082 | TetraFET 40W - 28V - 1.0GHz |
| D2082UK | TetraFET 40W - 28V - 1.0GHz |
| D2083UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-1.0GHz)(鍍金多用DMOS射頻硅場效應(yīng)管(80W-28V-1.0GHz)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D2081UK.F | 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET |
| D2082 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 14VA 2 X 12V |
| D2082 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 14VA 2X 12V |
| D208200/500V | 制造商:Ashcroft Caps 功能描述:SILVER MICA CAP 8200PF |
| D2082UK | 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。