- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376510 > D2003 (TT electronics Semelab Limited) METAL GATE RF SILICON FET PDF資料下載
參數(shù)資料
| 型號： | D2003 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | D2003 |
D2003UK
Prelim.01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
65
1
1
7
1
0.18
13
40
20:1
12
6
0.5
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
P
O
= 5W
V
DS
= 28V
f = 1GHz
I
DQ
= 0.2A
V
DS
= 28V
V
DS
= 28V
V
DS
= 28V
V
GS
=
–
5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25
°
C unless otherwise stated)
Drain
–
Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj
–
case
Thermal Resistance Junction
–
Case
Max. 5.0
°
C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
￡
2%
TOTAL DEVICE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
h
VSWR
C
iss
C
oss
C
rss
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D2003UK | METAL GATE RF SILICON FET |
| D2004UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(10W-28V-1GHz,推拉式)) |
| D2004UK | METAL GATE RF SILICON FET |
| D2005UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(7.5W-28V-1GHz,單端式)) |
| D2005 | METAL GATE RF SILICON FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D200-3/4-100FT | 功能描述:SLEEVING DAFLAX .75 IN WHT 100FT RoHS:是 類別:線纜，導(dǎo)線 - 管理 >> 實心管，套管 系列:D200 標(biāo)準(zhǔn)包裝:1 系列:- 類型:波紋 直徑 - 內(nèi)部:0.906"（23.0mm） 直徑 - 外部:1.122"（28.5mm） 長度:82.02'（25m） 材質(zhì):聚酰胺 顏色:黑 其它名稱:A16093-25 |
| D2003UK | 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET |
| D200-400FR | 制造商:TE Connectivity 功能描述:F70767-001 |
| D200-400-FR | 功能描述:電纜套管 HS-TRANSITION RoHS:否 制造商:TE Connectivity / Raychem 類型:Molded Boot 材料:Polyolefin, Flexible Modified 顏色: 高度: 長度:105.9 mm 寬度:6.4 mm 最大光束直徑: |
| D2004-2 | 制造商:INTEL73+ 功能描述: 制造商:INTEL95/12 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。