參數(shù)資料
型號(hào): D2003UK
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CERAMIC, DQ, 5 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 60K
代理商: D2003UK
D2003UK
Prelim.01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
35W
65V
±20V
1A
–65 to 150°C
200°C
MECHANICAL DATA
C
A
O
N
M
K
J
I
H
G
F
E
D
B
1
5
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
mm
16.38
1.52
45
°
6.35
3.30
14.22
1.27 x 45
°
1.52
6.35
0.13
2.16
1.52
5.08
18.90
Tol.
0.26
0.13
5
°
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45
°
0.250
0.130
0.560
0.05 x 45
°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
5
°
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
DQ
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
PIN 2
PIN 4
DRAIN 1
GATE 2
相關(guān)PDF資料
PDF描述
D2004UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(10W-28V-1GHz,推拉式))
D2004UK METAL GATE RF SILICON FET
D2005UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(7.5W-28V-1GHz,單端式))
D2005 METAL GATE RF SILICON FET
D2005UK METAL GATE RF SILICON FET
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