參數(shù)資料
型號: D1210UK
英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(10W-12.5V-175MHz,單端式))
中文描述: 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管(功率10W - 12.5V - 175MHz時,單端)(鍍金多用的DMOS射頻硅場效應(yīng)管(功率10W - 12.5V - 175MHz時,單端式))
文件頁數(shù): 1/2頁
文件大小: 16K
代理商: D1210UK
D1210UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
40V
±20V
8A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
A
M
F
E
D
C
B
H
J
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
DA
PIN 1
SOURCE
PIN 3
SOURCE
PIN 2
DRAIN
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17
5.71
9.52
6.60
0.13
4.32
2.54
20.32
Tol.
0.13
0.13
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
相關(guān)PDF資料
PDF描述
D1210 METAL GATE RF SILICON FET
D1210UK METAL GATE RF SILICON FET
D1211UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(10W-12.5V-500MHz,單端式))
D1211 METAL GATE RF SILICON FET
D1211UK METAL GATE RF SILICON FET
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