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參數(shù)資料
| 型號(hào)： | D1012UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(100W-28V-500MHz,推挽式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管（功率100W - 28V的- 500MHz的，推挽式）（鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管（功率100W - 28V的- 500MHz的，推挽式）） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 50K |
| 代理商： | D1012UK |
D1012UK
Prelim. 11/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
70
3
1
7
1
2.4
10
50
20:1
180
90
7.5
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 3A
P
O
= 100W
V
DS
= 28V
f = 500MHz
I
DQ
= 1.2A
V
DS
= 28V
V
DS
= 28V
V
DS
= 28V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
BV
DSS
I
DSS
I
GSS
G
PS
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
h
VSWR
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 0.6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
￡
2%
TOTAL DEVICE
PER SIDE
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| D1014UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(20W-28V-400MHz,單端式)) |
| D1015UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(125W-28V-400MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(125W-28V-400MHz,推挽式)) |
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