參數(shù)資料
型號(hào): D1012UK
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CERAMIC, DH, 5 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 50K
代理商: D1012UK
D1012UK
Prelim. 11/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
290W
70V
±20V
15A
–65 to 150°C
200°C
MECHANICAL DATA
A
M
K
J
I
H
G
(typ)
F
E
D
C
B
(4 pls)
N
1
5
4
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
DH
PIN 1
SOURCE (COMMON)
PIN 2
DRAIN 1
PIN 3
DRAIN 2
PIN 4
GATE 2
PIN 5
GATE 1
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
13.97
5.72
45°
9.78
1.65R
23.75
1.52R
30.48
19.17
0.13
2.54
1.52
5.08
Tol.
0.26
0.13
0.13
0.13
0.13
0.13
0.13
0.26
0.02
0.13
0.13
0.50
Inches
0.550
0.225
45°
0.385
0.065R
0.935
0.060R
1.200
0.755
0.005
0.100
0.060
0.200
Tol.
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.010
0.001
0.005
0.005
0.020
相關(guān)PDF資料
PDF描述
D1013UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-28V-500MHz,推挽式))
D1013UK METAL GATE RF SILICON FET
D1014UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-28V-400MHz,單端式))
D1015UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(125W-28V-400MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(125W-28V-400MHz,推挽式))
D1015UK METAL GATE RF SILICON FET
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