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參數(shù)資料
| 型號： | D10-28 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 14K |
| 代理商： | D10-28 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 50 mA
BV
CES
I
C
= 10 mA
BV
EBO
I
E
= 5.0 mA
I
CBO
V
CE
= 28 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
30
50
4.0
15
UNITS
V
V
V
μ
A
---
250
150
C
CB
V
CB
= 28 V
f = 1.0 MHz
12
pF
P
G
η
C
V
CE
= 28 V
P
OUT
= 10 W f = 960 MHz
5.2
50
dB
%
NPN SILICON RF POWER TRANSISTOR
D10-28
DESCRIPTION:
The
ASI D10-28
is Designed for
General Purpose UHF Amplifier
Applications up to 1200 MHz.
FEATURES:
P
G
= 5.2 dB Typ. at 10 W/960 MHz
Emitter Ballasting for Ruggedness
Omnigold
Metallization System
MAXIMUM RATINGS
I
C
1.0 A
V
CEO
30 V
P
DISS
20 W @ T
C
= 25 °C
T
J
-65 to +200 °C
T
STG
-65 to +150 °C
8.8
O
C/W
θ
JC
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.285 / 7.24
.137 / 3.48
.007 / 0.18
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
E
E
B
C
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