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參數(shù)資料
| 型號： | D1030UK |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W ? 28V ? 175MHz PUSH?PULL |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC, DR, 5 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | D1030UK |
DIM
A
B
C
D
E
Millimetres
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.61R
Tol.
0.50
0.13
5°
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.064R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
F
G
H
I
J
K
M
N
O
P
D1030UK
Document Number 5310
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
500W
70V
±20V
40A
–65 to 150°C
200°C
MECHANICAL DATA
M
K
J
I
O
N
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(typ)
P
(2 pls)
1
5
4
3
2
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
400W – 28V – 175MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
PIN 2
PIN 4
DRAIN 1
GATE 2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
相關PDF資料 |
PDF描述 |
|---|---|
| D1034UK | METAL GATE RF SILICON FET(GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W - 28V - 500MHz PUSH-PULL) |
| D106C | Fixed Inductors for Surface Mounting |
| D10FL | Fixed Inductors for Surface Mounting |
| D10FS | Fixed Inductors for Surface Mounting |
| D10F | Fixed Inductors for Surface Mounting |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| D1031 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET |
| D1031SH | 制造商:EUPEC 制造商全稱:EUPEC 功能描述:Fast Hard Drive Diod e |
| D1031SH45T | 功能描述:整流器 4.5KV 1.47KA RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| D1031SH45TS02(PR) | 制造商:Infineon Technologies AG 功能描述: |
| D1031UK | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET |
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