參數(shù)資料
型號(hào)： CYM9273
廠商： Cypress Semiconductor Corp.
英文描述： 512K x 36 SRAM Module(512K x 36 靜態(tài)RAM模塊)
中文描述： 為512k × 36的SRAM模塊（為512k × 36靜態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 6/10頁(yè)
文件大?。?/td> 149K
代理商： CYM9273
CYM9270
CYM9271B
CYM9272A
CYM9273
6
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
55
°
C to +125
°
C
Ambient Temperature
with Power Applied.........................................
–
0
°
C to +70
°
C
3.3V Supply Voltage to Ground Potential......
–
0.5V to +4.5V
DC Voltage Applied to Outputs
in High Z State..............................................
–
0.5V to +4.6V
DC Input Voltage ...........................................
–
0.5V to +4.6V
Output Current into Outputs (LOW)............................. 20 mA
Operating Range
Range
Commercial
AmbientTemperature
0
°
C to +70
°
C
V
CC
3.3V
±
5%
Electrical Characteristics
Over the Operating Range
Parameter
V
IH
V
IL
V
OH
V
OL
I
CC (9270)
Description
Test Condition
Min.
2.2
–
0.3
2.4
Max.
Unit
V
V
V
V
mA
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage
Output LOW Voltage
V
CC
Operating Supply Current
V
CC
+ 0.3
0.8
V
CC
=Min. I
OH
=
4 mA
V
CC
=Min. I
OL
= 8 mA
V
CC
=Max., I
OUT
=0 mA, f=f
MAX
=1/t
RC
0.4
350
I
CC (9271B)
V
CC
Operating Supply Current
V
CC
=Max., I
OUT
=0 mA, f=f
MAX
=1/t
RC
500
mA
I
CC (9272A)
I
CC (9273)
V
CC
Operating Supply Current
V
CC
Operating Supply Current
V
CC
=Max., I
OUT
=0 mA, f=f
MAX
=1/t
RC
V
CC
=Max., I
OUT
=0 mA, f=f
MAX
=1/t
RC
1000
1200
mA
mA
Capacitance
[1]
Parameter
C
A
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
9270
9271B
9272A
9273
9270
9271B
9272A
9273
9270
9271B
9272A
9273
9270
9271B
9272A
9273
Max.
12
7
14
20
12
8
16
20
9
5
10
16
6
3
3
5
Unit
pF
Address Input Capacitance
C
I
Control Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
C
O
Input / Output Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
C
CLK
Clock Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Note:
1.
Tested initially and after any design or process changes that may affect these parameters.
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