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參數(shù)資料
| 型號： | CYM1851P6-20C |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1,024K x 32 Static RAM Module |
| 中文描述： | 1M X 32 MULTI DEVICE SRAM MODULE, 20 ns, PSMA72 |
| 封裝： | ANGLED, PLASTIC, SIMM-72 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 357K |
| 代理商： | CYM1851P6-20C |
CYM1851
Document #: 38-05274 Rev. **
Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
55
°
C to +125
°
C
Ambient Temperature with
Power Applied...............................................
–
10
°
C to +85
°
C
Supply Voltage to Ground Potential...............
–
0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State.................................................
–
0.5V to +V
CC
DC Input Voltage ............................................
–
0.5V to +7.0V
Selection Guide
1851-12
12
1520
480
1851-15
15
1520
480
1851-20
20
1200
480
1851-25
25
1200
480
1851-35
35
960
480
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
V
CC
Commercial
5V
±
10%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Test Conditions
Min.
2.4
Max.
Unit
V
V
V
V
μ
A
μ
A
mA
mA
mA
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
V
CC
Operating Supply
Current
V
CC
= Min., I
OH
=
–
4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
0.4
2.2
–
0.5
–
16
–
10
V
CC
+ 0.3
0.8
+16
+10
1200
1520
480
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
V
CC
= Max., I
OUT
= 0 mA,
CS
N
< V
IL
-20, -25, -35
-12, -15
I
SB1
Automatic CS Power-Down
Current
[1]
Automatic CS Power-Down
Current
[1]
Max. V
CC
, CS > V
IH
,
Min. Duty Cycle = 100%
Max. V
CC
,
CS > V
CC
–
0.2V,
V
IN
> V
CC
–
0.2V, or
V
IN
< 0.2V
I
SB2
-20, -25, -35
-12, -15
80
240
mA
mA
Capacitance
[2]
Parameter
C
INA
C
INB
C
OUT
Notes:
1.
A pull-up resistor to V
on the CS input is required to keep the device deselected during V
CC
power-up, otherwise I
SB
will exceed values given.
2.
Tested on a sample basis.
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
80
20
20
Unit
pF
pF
pF
Input Capacitance (WE, OE, A
0
–
19
)
Input Capacitance (CS)
Output Capacitance
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