參數(shù)資料
型號(hào)： CYM1831PZ-20C
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 64K x 32 Static RAM Module
中文描述： 64K X 32 MULTI DEVICE SRAM MODULE, 20 ns, PZMA64
封裝： PLASTIC, ZIP-64
文件頁數(shù)： 2/8頁
文件大?。?/td> 246K
代理商： CYM1831PZ-20C
CYM1831
Document #: 38-05270 Rev. **
Page 2 of 8
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
–
55
°
C to +125
°
C
Supply Voltage to Ground Potential...............
–
0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State...............................................
–
0.5V to +7.0V
DC Input Voltage............................................
–
0.5V to +7.0V
Output Current into Outputs (LOW).............................20 mA
Selection Guide
1831-15
15
1120
160
1831-20
20
960
160
1831-25
25
720
160
1831-30
30
720
160
1831-35
35
720
160
1831-45
45
720
160
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
V
CC
Commercial
5V
±
10%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
V
CC
Operating
Supply Current
Automatic CS Pow-
er-Down Current
[1]
Automatic CS Pow-
er-Down Current
[1]
Test Conditions
V
CC
= Min., I
OH
=
–
4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
1831-15
Min.
2.4
1831-20
Min.
2.4
1831-25, 30, 35,
45
Min.
2.4
Unit
V
V
V
V
μ
A
μ
A
Max.
Max.
Max.
0.4
V
CC
0.8
+20
+20
0.4
V
CC
0.8
+20
+20
0.4
V
CC
0.8
+20
+20
2.2
–
0.5
–
20
–
20
2.2
–
0.5
–
20
–
20
2.2
–
0.5
–
20
–
20
GND < V
I
< V
CC
GND < V
O
< V
CC
,
Output Disabled
V
CC
= Max., I
OUT
= 0 mA,
CS
N
< V
IL
V
CC
= Max., CS
N
> V
IH
,
Min. Duty Cycle = 100%
V
CC
= Max., CS
N
> V
CC
–
0.2V,
V
IN
> V
CC
–
0.2V or V
IN
< 0.2V
I
CC
1120
960
720
mA
I
SB1
320
320
320
mA
I
SB2
160
160
160
mA
Capacitance
[2]
Parameter
C
INA
C
INB
C
OUT
Notes:
1.
A pull-up resistor to V
on the CS input is required to keep the device deselected during V
CC
power-up, otherwise I
SB
will exceed values given.
2.
Tested on a sample basis.
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
80
15
20
Unit
pF
pF
pF
Input Capacitance (A
0
–
A
15
, WE, OE)
Input Capacitance (CS)
Output Capacitance
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