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參數(shù)資料
| 型號： | CYK001M16ZCCAU |
| 英文描述： | Memory |
| 中文描述： | 內(nèi)存 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 168K |
| 代理商： | CYK001M16ZCCAU |
ADVANCE
INFORMATION
CYK001M16SCCAU
MoBL
Document #: 38-05426 Rev. **
Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................
0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State
[5, 6, 7]
.......................................
0.4V to 3.3V
DC Input Voltage
[5, 6, 7]
....................................
0.4V to 3.3V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
[9]
Range
Industrial
Ambient
Temperature (T
A
)
-25°C to +85°C
V
CC
2.7V to 3.3V
Product Portfolio
Product
V
CC
Range
(V)
Typ.
3.0
Speed
(ns)
70
Power Dissipation
Operating, Icc (mA)
f = 1 MHz
Typ.
[8]
Max.
2
3.5
Standby, I
SB2
(
μ
A)
Typ.
[8]
80
f = f
MAX
Typ.
[8]
13
Min.
2.7
Max.
3.3
Max.
17
Max.
150
CYK001M16SCCAU-BAI
DC Electrical Characteristics
(Over the Operating Range)
Parameter
Vcc
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Test Conditions
CYK001M16SCCAU-70
Min.
Typ.
[8]
2.7
V
CC
– 0.4
Unit
V
V
V
V
V
μ
A
μ
A
mA
Max.
3.3
Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
CC
Operating Supply
Current
I
OH
=
1 mA
I
OL
= 2 mA
0.4
0.8 * V
CC
0.4
1
1
V
CC
+ 0.4
0.4
+1
+1
17
3.5
525
F = 0
GND < V
I
< Vcc
GND < V
O
< Vcc, Output Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
CE > Vcc
0.2V, CE
2
< 0.2V
V
IN
> Vcc
0.2V, V
IN
< 0.2V,
f = f
MAX
(Address and Data Only),
f = 0 (OE, WE, BHE and BLE)
CE > Vcc
0.2V, CE
2
< 0.2V
V
IN
> Vcc
0.2V or V
IN
< 0.2V,
f = 0, V
CC
=3.3V
Vcc = 3.3V, I
OUT
=
0mA, CMOS level
13
2
100
I
SB1
Automatic CE Power-down
Current
CMOS Inputs
μ
A
I
SB2
Automatic CE Power-down
Current
CMOS Inputs
80
150
μ
A
Capacitance
[10]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Notes:
5. V
IH(MAX)
= V
+ 0.5V for pulse durations less than 20 ns.
6. V
= –0.5V for pulse durations less than 20 ns.
7. Overshoot and undershoot specifications are characterized and are not 100% tested.
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC
(typ) and T
A
= 25C.
9. Vcc must be at minimal operational levels before inputs are turned ON.
10.Tested initially and after design or process changes that may affect these parameters.
Input Capacitance
Output Capacitance
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