- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379098 > CYDC064B08 (Cypress Semiconductor Corp.) 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM PDF資料下載
參數(shù)資料
| 型號： | CYDC064B08 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| 中文描述： | 1.8 4k/8k/16k × 16和8k/16k × 8 ConsuMoBL雙端口靜態(tài)存儲器 |
| 文件頁數(shù)： | 15/26頁 |
| 文件大?。?/td> | 580K |
| 代理商： | CYDC064B08 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁當(dāng)前第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
Document #: 001-01638 Rev. *E
Page 15 of 26
Switching Characteristics for V
CC
= 2.5V
Over the Operating Range
Parameter
Description
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
Unit
-40
-55
Min.
Max.
Min.
Max.
Read Cycle
t
RC
t
AA
t
OHA
t
ACE[28]
t
DOE
t
LZOE[29, 30, 31]
t
HZOE[29, 30, 31]
t
LZCE[29, 30, 31]
t
HZCE[29, 30, 31]
t
PU[31]
t
PD[31]
t
ABE[28]
Write Cycle
Read Cycle Time
40
55
ns
Address to Data Valid
40
55
ns
Output Hold From Address Change
5
5
ns
CE LOW to Data Valid
40
55
ns
OE LOW to Data Valid
25
30
ns
OE Low to Low Z
2
2
ns
OE HIGH to High Z
15
15
ns
CE LOW to Low Z
2
2
ns
CE HIGH to High Z
15
15
ns
CE LOW to Power-Up
0
0
ns
CE HIGH to Power-Down
40
55
ns
Byte Enable Access Time
40
55
ns
t
WC
t
SCE[28]
t
AW
t
HA
t
SA[28]
t
PWE
t
SD
t
HD
t
HZWE[30, 31]
t
LZWE[30, 31]
t
WDD[32]
t
DDD[32]
Busy Timing
[33]
Write Cycle Time
40
55
ns
CE LOW to Write End
30
45
ns
Address Valid to Write End
30
45
ns
Address Hold From Write End
0
0
ns
Address Set-up to Write Start
0
0
ns
Write Pulse Width
25
40
ns
Data Set-up to Write End
20
30
ns
Data Hold From Write End
0
0
ns
R/W LOW to High Z
15
25
ns
R/W HIGH to Low Z
0
0
ns
Write Pulse to Data Delay
55
80
ns
Write Data Valid to Read Data Valid
55
80
ns
t
BLA
t
BHA
t
BLC
t
BHC
t
PS[34]
t
WB
t
WH
t
BDD[35]
BUSY LOW from Address Match
30
45
ns
BUSY HIGH from Address Mismatch
30
45
ns
BUSY LOW from CE LOW
30
45
ns
BUSY HIGH from CE HIGH
30
45
ns
Port Set-up for Priority
5
5
ns
R/W HIGH after BUSY (Slave)
0
0
ns
R/W HIGH after BUSY HIGH (Slave)
20
35
ns
BUSY HIGH to Data Valid
30
40
ns
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CYDC064B08-40AXC | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC064B08-55AXC | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC064B08-55AXI | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC064B16 | Replacement for National Semiconductor part number DM9328N. Buy from authorized manufacturer Rochester Electronics. |
| CYDC064B16-40AXC | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CYDC064B08-40AXC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC064B08-55AXC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC064B08-55AXI | 功能描述:靜態(tài)隨機存取存儲器 64K 8Kx8 Consumer Hi Vol Dual Port IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYDC064B16 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC064B16-40AXC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。