參數(shù)資料
型號(hào)： CYD04S72V-133BBI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM
中文描述： 64K X 72 DUAL-PORT SRAM, 4.4 ns, PBGA484
封裝： 23 X 23 MM, 1.60 MM HEIGHT, 1 MM PITCH, MO-192, FBGA-484
文件頁(yè)數(shù)： 16/26頁(yè)
文件大?。?/td> 470K
代理商： CYD04S72V-133BBI
PRELIMINARY
CYD04S72V
CYD09S72V
CYD18S72V
Document #: 38-06069 Rev. *D
Page 16 of 26
Bank Select Read
[32, 33]
Read-to-Write-to-Read (OE = LOW)
[31, 34, 35, 36, 37]
Notes:
32. In this depth-expansion example, B1 represents Bank #1 and B2 is Bank #2; each bank consists of one Cypress FLEx72 device from this data sheet. ADDRESS
(B1)
= ADDRESS
(B2)
.
33. ADS = CNTEN= BE0 – BE7 = OE = LOW; MRST = CNTRST = CNT/MSK = HIGH.
34. Output state (HIGH, LOW, or high-impedance) is determined by the previous cycle control signals.
35. During “No Operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity.
36.
CE
0
= OE = BE0 – BE7 = LOW; CE
1
= R/W = CNTRST = MRST = HIGH.
37. CE
= BE0 – BE7 = R/W = LOW; CE
= CNTRST = MRST = CNT/MSK = HIGH. When R/W first switches low, since OE = LOW, the Write operation cannot be
completed (labelled as no operation). One clock cycle is required to three-state the I/O for the Write operation on the next rising edge of CLK.
Switching Waveforms
(continued)
Q
3
Q
1
Q
0
Q
2
A
0
A
1
A
2
A
3
A
4
A
5
Q
4
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
t
SC
t
HC
t
SA
t
HA
t
SC
t
HC
t
SC
t
HC
t
SC
t
HC
t
CKHZ
t
DC
t
DC
t
CD2
t
CKLZ
t
CD2
t
CD2
t
CKHZ
t
CKLZ
t
CD2
t
CKHZ
t
CKLZ
t
CD2
t
CH2
t
CL2
t
CYC2
CLK
ADDRESS
(B1)
CE
(B1)
DATA
OUT(B2)
DATA
OUT(B1)
ADDRESS
(B2)
CE
(B2)
CLK
CE
R/W
ADDRESS
DATA
IN
DATA
OUT
t
HC
t
SC
t
HW
t
SW
t
HA
t
SA
t
HW
t
SW
t
CD2
t
CKHZ
t
SD
t
HD
NO
OPERATION
WRITE
READ
A
n
A
n+1
A
n+2
A
n+2
D
n+2
A
n+2
A
n+3
Q
n
t
CL2
t
CH2
t
CYC2
t
DC
相關(guān)PDF資料
PDF描述
CYD04S72V-167BBC FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM
CYD09S72V-133BBC FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM
CYD09S72V-133BBI FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM
CYD09S72V-167BBC FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM
CYD18S72V-100BBC FLEx72 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CYD04S72V-167BBC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4MB (64Kx72) 3.3v 167MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYD04S72V18-167BBXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M Sync Dual Port 64Kx72 90nm COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYD04S72V18-167BBXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M Sync Dual Port 64Kx72 90nm IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYD04S72V18-200BBXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M Sync Dual Port 64Kx72 90nm COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYD04S72V18-200BBXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M Sync Dual Port 64Kx72 90nm IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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