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參數(shù)資料
| 型號： | CY9C62256-70ZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | 存儲器 |
| 英文描述： | 32K x 8 Magnetic Nonvolatile CMOS RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PDSO28 |
| 封裝： | 8 X 13.40 MM, TSOP-28 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 374K |
| 代理商： | CY9C62256-70ZI |
PRELIMINARY
CY9C62256
Document #: 38-15001 Rev. *E
Page 6 of 11
Switching Waveforms
Notes:
12.Device is continuously selected. OE, CE = V
IL
.
13.WE is HIGH for read cycle.
14.Address valid prior to or coincident with CE transition LOW.
15.Data I/O is high impedance if OE = V
.
16.If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
17.During this period, the I/Os are in output state and input signals should not be applied.
ADDRESS
DATA OUT
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
Read Cycle No. 1
[12, 13]
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
DATA OUT
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
t
HZOE
t
HZCE
t
PD
OE
CE
HIGH
V
SUPPLY
CURRENT
Read Cycle No. 2
[13,14]
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
DATA I/O
ADDRESS
CE
WE
OE
t
HZOE
DATA IN VALID
NOTE
Write Cycle No. 1 (WE Controlled)
[10,15,16]
17
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| CY9C6264 | 8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70SNI | 8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70PI | 8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70SI | 8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70SNC | 8K x 8 Magnetic Nonvolatile CMOS RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY9C6264 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70PC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70PI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70SC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:8K x 8 Magnetic Nonvolatile CMOS RAM |
| CY9C6264-70SI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:8K x 8 Magnetic Nonvolatile CMOS RAM |
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