參數(shù)資料
型號(hào): CY8C27666-SPPVXI
廠商: Cypress Semiconductor Corp.
英文描述: PSoC⑩ Mixed Signal Array
中文描述: ⑩的PSoC混合信號(hào)陣列
文件頁(yè)數(shù): 17/39頁(yè)
文件大?。?/td> 610K
代理商: CY8C27666-SPPVXI
June 1, 2004
Document No. 38-12019 Rev. *B
17
CY8C27x66 Preliminary Data Sheet
3. Electrical Specifications
3.3
DC Electrical Characteristics
3.3.1
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
T
A
85
°
C, or 3.0V to 3.6V and -40
°
C
T
A
85
°
C, respectively. Typical parameters apply to 5V and 3.3V at 25
°
C and
are for design guidance only or unless otherwise specified.
3.3.2
DC General Purpose IO Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
T
A
85
°
C, or 3.0V to 3.6V and -40
°
C
T
A
85
°
C, respectively. Typical parameters apply to 5V and 3.3V at 25
°
C and
are for design guidance only or unless otherwise specified.
Table 3-4: DC Chip-Level Specifications
Symbol
Vdd
I
DD
Description
Min
Typ
Max
Units
Notes
Supply Voltage
Supply Current
3.00
8
5.25
14
V
mA
Conditions are 5.0V, 25
o
C, 3 MHz, 48 MHz dis-
abled. VC1=1.5 MHz, VC2=93.75 kHz,
VC3=0.366 kHz.
Conditions are Vdd=3.3V, T
A
=25
o
C, CPU=3
MHz, 48 MHz=Disabled, VC1=1.5 MHz,
VC2=93.75 kHz, VC3=0.366 Khz.
Conditions are Vdd=3.3V, T
A
=25
o
C, CPU=3
MHz, 48 MHz=Disabled, VC1=1.5 MHz,
VC2=93.75 kHz, VC3=0.366 Khz.
Conditions are with internal slow speed oscilla-
tor, Vdd = 3.3V, -40
o
C <=T
A
<= 55
o
C.
I
DD3
Supply Current
5
9
mA
I
DDP
Supply current when IMO = 6 MHz
2
3
mA
I
SB
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and internal slow oscillator active. Lower 3/4 temperature
range.
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and internal slow oscillator active. Higher 1/4 temperature
range (hot).
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
internal slow oscillator, and 32 kHz crystal oscillator active.
Lower 3/4 temperature range.
3
10
μ
A
I
SBH
4
25
μ
A
Conditions are with internal slow speed oscilla-
tor, Vdd = 3.3V, 55
o
C < T
A
<= 85
o
C.
I
SBXTL
4
12
μ
A
Conditions are with properly loaded, 1
μ
W max,
32.768 kHz crystal. Vdd = 3.3V, -40
o
C <= T
A
<=
55
o
C.
Conditions are with properly loaded, 1
μ
W max,
32.768 kHz crystal. Vdd = 3.3V, 55
o
C < T
A
<=
85
o
C.
Trimmed for appropriate Vdd.
I
SBXTLH
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and 32 kHz crystal oscillator active. Higher 1/4 temperature
range (hot).
5
27
μ
A
V
REF
Reference Voltage (Bandgap)
1.28
1.3
1.32
V
Table 3-5: DC GPIO Specifications
Symbol
R
PU
R
PD
V
OH
Description
Min
Typ
Max
Units
k
k
V
Notes
Pull up Resistor
4
5.6
8
Pull down Resistor
4
5.6
8
High Output Level
Vdd - 1.0
IOH = 10 mA, Vdd = 4.75 to 5.25V (8 IO switch-
ing, 4 per side)
IOL = 25 mA, Vdd = 4.75 to 5.25V (8 IO switch-
ing, 4 per side)
Vdd = 3.0 to 5.25
V
OL
Low Output Level
0.75
V
V
IL
V
IH
V
H
I
IL
C
IN
C
OUT
Input Low Level
0.8
V
Input High Level
2.1
V
Vdd = 3.0 to 5.25
Input Hysterisis
60
mV
Input Leakage (Absolute Value)
1
nA
Gross tested to 1
μ
A.
Capacitive Load on Pins as Input
3.5
10
pF
Package and pin dependent. Temp = 25
o
C.
Package and pin dependent. Temp = 25
o
C.
Capacitive Load on Pins as Output
3.5
10
pF
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