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CY7C401/CY7C403
CY7C402/CY7C404
2
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage to Ground Potential............... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State............................................... –0.5V to +7.0V
DC Input Voltage............................................ –3.0V to +7.0V
Power Dissipation ..........................................................1.0W
Output Current, into Outputs (LOW)............................ 20 mA
Static Discharge Voltage ...........................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
–55
°
C to +125
°
C
V
CC
Commercial
Military
[1]
5V
±
10%
5V
±
10%
Electrical Characteristics
Over the Operating Range (Unless Otherwise Noted)
[2]
7C40X–10, 15, 25
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
V
CD[3]
I
OZ
Description
Test Conditions
Min.
2.4
Max.
Unit
V
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Output LOW Voltage
0.4
V
Input HIGH Voltage
2.0
6.0
V
Input LOW Voltage
–3.0
0.8
V
μ
A
Input Leakage Current
Input Diode Clamp Voltage
[3]
GND
≤
V
I
≤
V
CC
–10
+10
Output Leakage Current
GND
≤
V
OUT
≤
V
CC
, V
CC
= 5.5V
Output Disabled (CY7C403 and CY7C404)
–50
+50
μ
A
I
OS
I
CC
Output Short Circuit Current
[4]
V
CC
= Max., V
OUT
= GND
V
CC
= Max., I
OUT
= 0 mA
–90
mA
Power Supply Current
Commercial
75
mA
Military
90
mA
Capacitance
[5]
Parameter
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 4.5V
Max.
5
Unit
pF
C
IN
C
OUT
Notes:
1.
2.
3.
Input Capacitance
Output Capacitance
7
pF
T
is the “instant on” case temperature.
See the last page of this specification for Group A subgroup testing information.
The CMOS process does not provide a clamp diode. However, the FIFO is insensitive to –3V dc input levels and –5V undershoot pulses of less than 10 ns
(measured at 50% output).
For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.
Tested initially and after any design or process changes that may affect these parameters.
4.
5.