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參數資料
| 型號： | CY7C254 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率轉換和 可重復編程的 PROM) |
| 中文描述： | 16K的× 8電源開關和可再編程胎膜早破（16K的× 8功率轉換和可重復編程的可編程） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 283K |
| 代理商： | CY7C254 |
16K x 8 Power Switched and
Reprogrammable PROM
CY7C251
CY7C254
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
November 1986 – Revised December 1992
1CY7C254
Features
CMOS for optimum speed/power
Windowed for reprogrammability
High speed
—45 ns
Low power
—550 mW (commercial)
—660 mW (military)
Super low standby power (7C251)
—Less than 165 mW when deselected
—Fast access: 50 ns
EPROM technology 100% programmable
Slim 300-mil or standard 600-mil packaging available
5V
±
10% V
CC
, commercial and military
TTL-compatible I/O
Direct replacement for bipolar PROMs
Capable of withstanding >2001V static discharge
Functional Description
The CY7C251 and CY7C254 are high-performance
16,384-word by 8-bit CMOS PROMs. When deselected, the
CY7C251 automatically powers down into a low-power
stand-by mode. It is packaged in a 300-mil-wide package. The
7C254 is packaged in a 600-mil-wide package and does not
power down when deselected. The 7C251 and 7C254 are
available in reprogrammable packages equipped with an era-
sure window; when exposed to UV light, these PROMs are
erased and can then be reprogrammed. The memory cells uti-
lize proven EPROM floating gate technology and byte-wide
intelligent programming algorithms.
The CY7C251 and CY7C254 are plug-in replacements for bi-
polar devices and offer the advantages of lower power, supe-
rior performance, and high programming yield. The EPROM
cell requires only 12.5V for the super voltage, and low current
requirements allow for gang programming. The EPROM cells
allow each memory location to be tested 100% because each
location is written into, erased, and repeatedly exercised prior
to encapsulation. Each PROM is also tested for AC perfor-
mance to guarantee that after customer programming, the
product will meet DC and AC specification limits.
Reading is accomplished by placing all four chip selects in
their active states. The contents of the memory location ad-
dressed by the address lines (A
0
– A
13
) will become available on
the output lines (O
0
– O
7
).
Logic Block Diagram
Pin Configurations
C251-1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
17
18
19
20
24
23
22
21
25
28
27
26
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
V
CC
A
10
A
11
A
12
A
13
CS
1
CS
2
CS
O
7
O
6
O
5
O
4
O
3
C251-2
C251-3
POWER-DOWN
(7C251)
O
7
O
6
O
5
O
4
O
3
O
2
O
1
O
0
CS
1
CS
2
CS
3
CS
4
PR512 x 256
ARRAY
8 x 1 OF 32
MULTIPLEXER
12
13
O
0
O
1
31
4
5
6
7
8
9
10
11
3 2 1
30
14151617
26
25
24
23
22
21
A
5
A
4
A
3
A
2
A
1
A
0
NC
A
13
CS
1
CS
2
CS
3
CS
4
NC
O
7
O
6
DIP/Flatpack
A
12
181920
27
28
29
32
A
9
3
CS
4
LCC
7C251
7C251
7C254
X
Y
ADDRESS
COLUMN
ADDROW
A
13
A
12
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
7C254
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| CY7C282A | 1K x 8 PROM(1K x 8 PROM) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C2542KV18-333BZI | 制造商:Cypress Semiconductor 功能描述:QDR-LL+ SYNC SRAM - Trays |
| CY7C25442KV18-300BZI | 功能描述:靜態(tài)隨機存取存儲器 72MB (2Mx36) 1.8v 300MHz QDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C25442KV18-333BZI | 功能描述:靜態(tài)隨機存取存儲器 72MB (2Mx36) 1.8v 333MHz QDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C254-45PC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C2544KV18-300BZI | 功能描述:靜態(tài)隨機存取存儲器 2Mb x 36 300 MHz RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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