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參數(shù)資料
| 型號(hào)： | CY7C199D |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 256K (32K x 8) Static RAM(256K (32K x 8)靜態(tài)RAM) |
| 中文描述： | 256K（32K的× 8）靜態(tài)隨機(jī)存儲(chǔ)器（256K（32K的× 8）靜態(tài)的RAM） |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 917K |
| 代理商： | CY7C199D |
CY7C199D
256K (32K x 8) Static RAM
Cypress Semiconductor Corporation
Document #: 38-05471 Rev. *D
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 01, 2007
Features
Pin- and function-compatible with CY7C199C
High speed
— t
AA
=
10 ns
Low active power
— I
CC
= 80 mA @ 10 ns
Low CMOS standby power
— I
SB2
= 3 mA
2.0V Data Retention
Automatic power-down when deselected
CMOS for optimum speed/power
TTL-compatible inputs and outputs
Easy memory expansion with CE and OE features
Available in Pb-free 28-pin 300-Mil wide Molded SOJ and
28-pin TSOP I packages
Functional Description
[1]
The CY7C199D is a high-performance CMOS static RAM
organized as 32,768 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE), an active
LOW Output Enable (OE) and tri-state drivers. This device has
an automatic power-down feature, reducing the power
consumption when deselected. The input and output pins (IO
0
through IO
7
) are placed in a high-impedance state when:
Deselected (CE HIGH)
Outputs are disabled (OE HIGH)
When the write operation is active(CE LOW and WE LOW)
Write to the device by taking Chip Enable (CE) and Write
Enable (WE) inputs LOW. Data on the eight IO pins (IO
0
through IO
7
) is then written into the location specified on the
address pins (A
0
through A
14
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH.
Under these conditions, the contents of the memory location
specified by the address pins appears on the IO pins.
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
IO0
IO7
IO1
IO2
IO3
IO4
IO5
IO6
A
A
A
A
A
S
POWER
DOWN
CE
WE
OE
R
COLUMN DECODER
32K x 8
ARRAY
INPUT BUFFER
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at
www.cypress.com
.
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|---|---|
| CY7C199D-10VXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M 512K FAST ASYNC 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C199D-10VXIT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M 512K FAST ASYNC 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C199D10ZXI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 10ns 28-Pin TSOP-I |
| CY7C199D-10ZXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M 512K FAST ASYNC 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C199D-10ZXIT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M 512K FAST ASYNC 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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