參數(shù)資料
型號: CY7C1524AV18-300BZXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
中文描述: 2M X 36 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù): 23/28頁
文件大小: 1133K
代理商: CY7C1524AV18-300BZXI
PRELIMINARY
CY7C1522AV18
CY7C1529AV18
CY7C1523AV18
CY7C1524AV18
Document #: 001-06981 Rev. *B
Page 23 of 28
t
CCQO
t
CHCQV
C/C Clock Rise to Echo
Clock Valid
Echo Clock Hold after
C/C Clock Rise
Echo Clock High to Data
Change
Echo Clock High to Data
Change
Output Clock (CQ/CQ)
HIGH
[26]
CQ Clock Rise to CQ
Clock Rise
[26]
(rising edge to rising
edge)
0.45
0.45
0.45
0.45
0.50
ns
t
CQOH
t
CHCQX
–0.45
–0.45
–0.45
–0.45
–0.50
ns
t
CQD
t
CQHQV
0.27
0.27
0.30
0.35
0.40
ns
t
CQDOH
t
CQHQX
–0.27
–0.27
–0.30
–0.35
–0.40
ns
t
CQH
t
CQHCQL
1.24
1.35
1.55
1.95
2.45
ns
t
CQHCQH
t
CQHCQH
1.24
1.35
1.55
1.95
2.45
ns
t
CHZ
t
CHQZ
Clock (C/C) Rise to
High-Z
(Active to High-Z)
[27, 28]
Clock (C/C) Rise to
Low-Z
[27, 28]
0.45
0.45
0.45
0.45
0.50
ns
t
CLZ
t
CHQX1
–0.45
–0.45
–0.45
–0.45
–0.50
ns
DLL Timing
t
KC Var
t
KC lock
t
KC Reset
Notes:
26.These parameters are extrapolated from the input timing parameters (t
- 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (t
KC Var
) ia already
included in the t
). These parameters are only guaranteed by design and are not tested in production.
27.t
, t
, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured
±
100 mV from steady-state voltage.
28.At any given voltage and temperature t
CHZ
is less than t
CLZ
and t
CHZ
less than t
CO
.
t
KC Var
t
KC lock
t
KC Reset
Clock Phase Jitter
DLL Lock Time (K, C)
K Static to DLL Reset
0.20
0.20
0.20
0.20
0.20
ns
1024
30
1024
30
1024
30
1024
30
1024
30
Cycles
ns
Switching Characteristics
Over the Operating Range (continued)
[22, 23]
Cypress
Parameter
Consortium
Parameter
Description
300 MHz
Min. Max.
278 MHz
Min. Max. Min. Max. Min. Max. Min.
250 MHz
200 MHz
167 MHz
Unit
Max.
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