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參數(shù)資料
| 型號： | CY7C1518V18 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata |
| 中文描述： | RAM9 QDR-I/DDR-I/QDR-II/DDR-二勘誤表 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 217K |
| 代理商： | CY7C1518V18 |
Errata Revision: *C
May 02, 2007
RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
CY7C129*DV18/CY7C130*DV25
CY7C130*BV18/CY7C130*BV25/CY7C132*BV25
CY7C131*BV18 / CY7C132*BV18/CY7C139*BV18
CY7C191*BV18/CY7C141*AV18 / CY7C142*AV18/
CY7C151*V18 /CY7C152*V18
Cypress Semiconductor Corporation
Document #: 001-06217 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised:- May 02, 2007
This document describes the DOFF issue for QDRII/DDRII and the Output Buffer and JTAG issues for
QDRI/DDRI/QDRII/DDRII. Details include trigger conditions, possible workarounds and silicon revision applicability.
This document should be used to compare to the respective datasheet for the devices to fully describe the device
functionality.
Please contact your local Cypress Sales Representative for availability of the fixed devices and any other questions.
Devices Affected
Table 1.
List of Affected devices
Product Status
All of the above densities and revisions are available in sample as well as production quantities.
QDR/DDR DOFF Pin, Output Buffer and JTAG Issues Errata Summary
The following table defines the issues and the fix status for the different devices which are affected.
Density & Revision
9Mb - Ram9(90 nm)
9Mb - Ram9(90 nm)
18Mb - Ram9(90nm)
Part Numbers
CY7C130*DV25
CY7C129*DV18
CY7C130*BV18
CY7C130*BV25
CY7C132*BV25
CY7C131*BV18
CY7C132*BV18
CY7C139*BV18
CY7C191*BV18
CY7C141*AV18
CY7C142*AV18
CY7C151*V18
CY7C152*V18
Architecture
QDRI/DDRI
QDRII
QDRI/DDRI
18Mb - Ram9(90nm)
QDRII/DDRII
36Mb - Ram9(90nm)
QDRII/DDRII
72Mb -Ram9(90nm)
QDRII/DDRII
Item
Issue
Device
Fix Status
1.
DOFF pin is used for enabling/dis-
abling the DLL circuitry within the
SRAM. To enable the DLL circuitry,
DOFF pin must be externally tied
HIGH. The QDR-II/DDR-II devices
have an internal pull down resistor of
~5K
. The value of the external pull-
up resistor should be 500
order to ensure DLL is enabled.
or less in
9Mb - “D” Rev - Ram9
18Mb - “B” Rev - Ram9
36Mb - “A” Rev - Ram9
72Mb - Ram9
QDR-II/DDR-II Devices
The fix involved removing the in-
ternal pull-down resistor on the
DOFF pin. The fix has been im-
plemented on the new revision
and is now available.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1519V18 | RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata |
| CY7C1520V18 | RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata |
| CY7C1521V18 | RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata |
| CY7C1522V18 | RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata |
| CY7C1524V18 | RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1518V18-167BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V DDR II 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1518V18-167BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 1.8V 72MBIT 4MX18 0.5NS 165FBGA - Bulk |
| CY7C1518V18-200BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V DDR II 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1518V18-200BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Bulk |
| CY7C1518V18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V DDR II 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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