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參數資料
| 型號： | CY7C1518V18-278BZXI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| 中文描述： | 4M X 18 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數： | 28/28頁 |
| 文件大?。?/td> | 457K |
| 代理商： | CY7C1518V18-278BZXI |
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CY7C1516V18
CY7C1527V18
CY7C1518V18
CY7C1520V18
Document #: 38-05563 Rev. *D
Page 28 of 28
Document History Page
Document Title: CY7C1516V18/CY7C1527V18/CY7C1518V18/CY7C1520V18 72-Mbit DDR-II SRAM 2-Word
Burst Architecture
Document Number: 38-05563
Orig. of
Change
**
226981
See ECN
DIM
New Data Sheet
*A
257089
See ECN
NJY
Modified ID code for the x9 option in the JTAG ID Register Definitions table on
page 21
Included thermal values
Modified capacitance values table: included capacitance values for x8, x18 and
x36 options
*B
319496
See ECN
SYT
Removed CY7C1527V18 from the title
Included 300-MHz Speed Bin
Added footnote #1 and accordingly edited the V
SS
/144M And V
SS
/288M on the
Pin Definitions table
Added Industrial Temperature Grade
Replaced TBDs for I
DD
and I
SB1
for 300 MHz, 250 MHz, 200 MHz and 167 MHz
speed grades
Changed the C
IN
from 5 pF to 5.5 pF and C
O
from 7 pF to 8 pF in the
Capacitance Table
Removed the capacitance value column for the x9 option from Capacitance Table
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS
TRI-STATE on Page 17
Added lead-free product information
Updated the Ordering Information by Shading and unshading as per availability
*C
403231
See ECN
ZSD
Converted from Preliminary to Final
Added CY7C1527V18 part number to the title
Included 278-MHz Speed Bin
Changed C/C Pin Description in the features section and Pin Description
Changed the address of Cypress Semiconductor Corporation on Page#1 from
“3901 North First Street” to “198 Champion Court”
Added power-up sequence details and waveforms
Added foot notes #14, 15, 16 on page# 19
Replaced Three-state with Tri-state
Changed the description of I
X
from Input Load Current to Input Leakage Current
on page# 20
Modified the I
DD
and I
SB1
values for different speed bins
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information table
*D
467290
See ECN
NXR
Modified the ZQ Definition from Alternately this pin can be connected directly to
V
DD
to Alternately, this pin can be connected directly to V
DDQ
Included Maximum Ratings for Supply Voltage on V
DDQ
Relative to GND
Changed the Maximum Ratings for DC Input Voltage from V
DDQ
to V
DD
Changed t
TCYC
from 100 ns to 50 ns, changed t
TH
and t
TL
from 40 ns to 20 ns,
changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
, t
TDIH
, t
CH
from
10 ns to 5 ns and changed t
TDOV
from 20 ns to 10 ns in TAP AC Switching Characteristics table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
REV.
ECN No.
Issue Date
Description of Change
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1518V18-300BZC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518V18-300BZI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518V18-300BZXC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1518V18-300BZXI | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1520V18-167BZC | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C1518XC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1518YC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1518ZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1520AV18-200BZC | 功能描述:靜態(tài)隨機存取存儲器 2M x 36 1.8V DDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1520AV18-200BZCT | 功能描述:IC SRAM 72MBIT 200MHZ 165TFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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