參數(shù)資料
型號(hào)： CY7C1473V33-100AXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
中文描述： 4M X 18 ZBT SRAM, 8.5 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, TQFP-100
文件頁數(shù)： 16/29頁
文件大?。?/td> 375K
代理商： CY7C1473V33-100AXC
PRELIMINARY
CY7C1471V33
CY7C1473V33
CY7C1475V33
Document #: 38-05288 Rev. *E
Page 16 of 29
Scan Register Sizes
Register Name
Bit Size (x36)
3
1
32
71
-
Bit Size (x18)
3
1
32
52
-
Bit Size (x72)
3
1
32
-
110
Instruction
Bypass
ID
Boundary Scan Order–165FBGA
Boundary Scan Order– 209BGA
Identification Codes
Instruction
Code
000
Description
EXTEST
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant.
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload
function and is therefore not 1149.1 compliant.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
IDCODE
001
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
相關(guān)PDF資料
PDF描述
CY7C1473V33-100BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V33-100BZXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V33-133AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1473V33-133BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
CY7C1471V33-100BZC 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1474BV25-167BGC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1474BV25-167BGCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1474BV25-167BGI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1474BV25-167BGIT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72 2.5V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1474BV25-200BGC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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