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參數(shù)資料
| 型號： | CY7C1472V33-250BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| 中文描述： | 4M X 18 ZBT SRAM, 3 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, FBGA-165 |
| 文件頁數(shù)： | 28/28頁 |
| 文件大?。?/td> | 378K |
| 代理商： | CY7C1472V33-250BZC |
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PRELIMINARY
CY7C1470V33
CY7C1472V33
CY7C1474V33
Document #: 38-05289 Rev. *E
Page 28 of 28
Document History Page
Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with
NoBL Architecture
Document Number: 38-05289
Orig. of
Change
**
114676
08/06/02
PKS
New Data Sheet
*A
121520
01/27/03
CJM
Updated features for package offering
Removed 300-MHz offering
Changed tCO, tEOV, tCHZ, tEOHZ from 2.4 ns to 2.6 ns (250 MHz),
tDOH, tCLZ from 0.8 ns to 1.0 ns (250 MHz), tDOH, tCLZ from 1.0 ns
to 1.3 ns (200 MHz)
Updated ordering information
Changed Advanced Information to Preliminary
*B
223721
See ECN
NJY
Changed timing diagrams
Changed logic block diagrams
Modified Functional Description
Modified “Functional Overview” section
Added boundary scan order for all packages
Included thermal numbers and capacitance values for all packages
Included IDD and ISB values
Removed 250-MHz offering and included 225-MHz speed bin
Changed package outline for 165FBGA package and 209-ball BGA package
Removed 119-BGA package offering
*C
235012
See ECN
RYQ
Minor Change: The data sheets do not match on the spec system and
external web.
*D
243572
See ECN
NJY
Changed ball C11,D11,E11,F11,G11 from DQPb,DQb,DQb,DQb,DQb to
DQPa,DQa,DQa,DQa,DQa in page 4
Modified capacitance values in page 20
*E
299511
See ECN
SYT
Removed 225-MHz offering and included 250-MHz speed bin
Changed t
CYC
from 4.4 ns to 4.0 ns for 250-MHz Speed Bin
Changed
Θ
JA
from 16.8 to 24.63
°
C/W and
Θ
JC
from 3.3 to 2.28
°
C/W for
100 TQFP Package on Page # 20
Added lead-free information for 100-Pin TQFP and 165 FBGA Packages
Added comment of ‘Lead-free BG packages availability’ below the Ordering
Information
Add Industrial part numbers in Ordering Info section.
REV.
ECN No.
Issue Date
Description of Change
VBL
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1472V33-250BZXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| CY7C1474V33 | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| CY7C1474V33-167BGC | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| CY7C1474V33-167BGI | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
| CY7C1474V33-167BGXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1472XC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C147-35KMB | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1473BV33-133AXC | 功能描述:靜態(tài)隨機存取存儲器 72MB (4Mx18) 3.3v 133MHz 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1474BV25-167BGC | 功能描述:靜態(tài)隨機存取存儲器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1474BV25-167BGCT | 功能描述:靜態(tài)隨機存取存儲器 1Mx72, 2.5V NoBL PL RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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