參數(shù)資料
型號(hào): CY7C1460AV33
廠商: Cypress Semiconductor Corp.
英文描述: 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
中文描述: 36兆位(1米x 36/2M x 18/512K × 72)流水線的SRAM架構(gòu)的總線延遲(帶總線延遲結(jié)構(gòu)的36兆位(1米x 36/2M x 18/512K × 72)流水線的SRAM)
文件頁(yè)數(shù): 17/27頁(yè)
文件大?。?/td> 469K
代理商: CY7C1460AV33
CY7C1460AV33
CY7C1462AV33
CY7C1464AV33
Document #: 38-05353 Rev. *D
Page 17 of 27
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +4.6V
Supply Voltage on V
DDQ
Relative to GND ......–0.5V to +V
DD
DC to Outputs in Tri-State................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Electrical Characteristics
Over the Operating Range
[15, 16]
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
V
DD
3.3V
V
DDQ
–5%/+10%
2.5V –5% to
V
DD
DC Electrical Characteristics
Over the Operating Range
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
2.0
Max.
3.6
V
DD
2.625
Unit
V
V
V
V
V
V
V
V
V
V
V
μ
A
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
OH
=
4.0 mA
for 2.5V I/O, I
OH
=
1.0 mA
for 3.3V I/O, I
OL
=
8.0 mA
for 2.5V I/O, I
OL
=
1.0 mA
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
GND
V
I
V
DDQ
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
[15]
2.0
1.7
–0.3
–0.3
–5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[15]
I
X
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
SS
–30
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
5
Input Current of ZZ
–5
30
5
475
425
375
225
I
OZ
I
DD
Output Leakage Current GND
V
I
V
DDQ,
Output Disabled
V
DD
Operating Supply
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
–5
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 167 MHz
All speed grades
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = f
MAX
=
1/t
CYC
Max. V
DD
, Device Deselected,
V
IN
0.3V or V
IN
> V
DDQ
0.3V,
f = 0
Max. V
DD
, Device Deselected,
V
IN
0.3V or V
IN
> V
DDQ
0.3V,
f = f
MAX
= 1/t
CYC
Max. V
DD
, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = 0
I
SB2
All speed grades
120
mA
I
SB3
All speed grades
200
mA
I
SB4
All speed grades
135
mA
Notes:
15.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC)> –2V (Pulse width less than t
CYC
/2).
16.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
相關(guān)PDF資料
PDF描述
CY7C1464AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
CY7C1462AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
CY7C1472V33-167AXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-167BZXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-200AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1460AV33-167AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx36 3.3V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1460AV33-167AXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx36 3.3V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1460AV33-167AXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx36 3.3V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1460AV33167BZC 制造商:CYPRESS 功能描述:Pb Free
CY7C1460AV33-167BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (1Mx36) 3.3v 167MHz 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray