參數(shù)資料
型號(hào)： CY7C1460AV33
廠商： Cypress Semiconductor Corp.
英文描述： 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
中文描述： 36兆位（1米x 36/2M x 18/512K × 72）流水線的SRAM架構(gòu)的總線延遲（帶總線延遲結(jié)構(gòu)的36兆位（1米x 36/2M x 18/512K × 72）流水線的SRAM）
文件頁數(shù)： 1/27頁
文件大?。?/td> 469K
代理商： CY7C1460AV33
36-Mbit (1M x 36/2M x 18/512K x 72)
Pipelined SRAM with NoBL Architecture
CY7C1460AV33
CY7C1462AV33
CY7C1464AV33
Cypress Semiconductor Corporation
Document #: 38-05353 Rev. *D
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 22, 2006
Features
Pin-compatible and functionally equivalent to ZBT
Supports 250-MHz bus operations with zero wait states
— Available speed grades are 250, 200 and 167 MHz
Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
Fully registered (inputs and outputs) for pipelined
operation
Byte Write capability
3.3V power supply
3.3V/2.5V I/O power supply
Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
CY7C1460AV33, CY7C1462AV33 available in
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1464AV33
available in lead-free and non-lead-free 209-ball FBGA
package
IEEE 1149.1 JTAG-Compatible Boundary Scan
Burst capability—linear or interleaved burst order
“ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 are
3.3V, 1M x 36/2M x 18/512K x72 Synchronous pipelined burst
SRAMs with No Bus Latency (NoBL
)
logic, respectively.
They are designed to support unlimited true back-to-back
Read/Write
operations
with
CY7C1460AV33/CY7C1462AV33/CY7C1464AV33
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read
transitions.
CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 are pin
compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BW
a
–BW
h
for
CY7C1464AV33,
CY7C1460AV33 and BW
a
–BW
b
for CY7C1462AV33) and a
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
no
wait
states.
The
are
The
BW
a
–BW
d
for
A0, A1, A
C
MODE
BW
a
BW
b
BW
c
BW
d
WE
CE1
CE2
CE3
OE
READ LOGIC
DQs
DQP
a
DQP
b
DQP
c
DQP
d
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
ARRAY
E
E
INPUT
REGISTER 0
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BURST
LOGIC
A0'
A1'
D1
D0
Q1
Q0
A0
A1
C
ADV/LD
ADV/LD
E
INPUT
REGISTER 1
S
E
N
S
E
A
M
P
S
E
CLK
CEN
WRITE
DRIVERS
ZZ
SLEEP
CONTROL
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
Logic Block Diagram-CY7C1460AV33 (1M x 36)
相關(guān)PDF資料
PDF描述
CY7C1464AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
CY7C1462AV33 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(帶NoBL結(jié)構(gòu)的36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
CY7C1472V33-167AXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-167BZXI 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
CY7C1472V33-200AXC 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1460AV33-167AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx36 3.3V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1460AV33-167AXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx36 3.3V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1460AV33-167AXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx36 3.3V NoBL PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1460AV33167BZC 制造商:CYPRESS 功能描述:Pb Free
CY7C1460AV33-167BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (1Mx36) 3.3v 167MHz 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*