參數(shù)資料
型號(hào): CY7C1382CV25-225BGI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 512K x 36/1M x 18 Pipelined SRAM
中文描述: 1M X 18 CACHE SRAM, 2.8 ns, PBGA119
封裝: 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
文件頁數(shù): 20/33頁
文件大?。?/td> 537K
代理商: CY7C1382CV25-225BGI
CY7C1380CV25
CY7C1382CV25
PRELIMINARY
Document #: 38-05240 Rev. *A
Page 20 of 33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
55
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
55
°
C to +125
°
C
Supply Voltage on V
DD
Relative to GND .......
0.3V to +3.6V
DC Voltage Applied to Outputs
in High Z State
[11]
................................
0.5V to V
DDQ
+ 0.5V
DC Input Voltage
[11]
............................
0.5V to V
DDQ
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Electrical Characteristics
Over the Operating Range
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Notes:
11.
12. T
A
is the temperature.
Minimum voltage equals
2.0V for pulse durations of less than 20 ns.
Operating Range
Range
Ambient
Temp.
[12]
V
DD/
V
DDQ
2.5V
±
5%
Com
l
0
°
C
to
70
°
C
Ind
l
40
°
C to +85
°
C
Parameter
V
DD
/V
DDQ
V
OH
V
OL
V
IH
Description
Test Conditions
Min.
2.375
2.0
Max.
2.625
Unit
V
V
Power Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
V
DD
= Min., I
OH
=
1.0 mA
V
DD
= Min., I
OL
= 1.0 mA
0.4
V
DD
+
0.3
0.7
5
1.7
V
IL
I
X
Input LOW Voltage
[11]
Input Load Current
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current
V
DD
Operating Supply
0.3
5
GND < V
I
< V
DDQ
μ
A
I
ZZ
30
30
5
30
30
5
350
325
300
275
120
110
100
90
70
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
Input = V
SS
GND < V
I
< V
DDQ,
Output Disabled
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
I
OZ
I
DD
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All speed grades
I
SB1
Automatic CE Power-
Down Current
TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
f = f
MAX
= 1/t
CYC
I
SB2
Automatic CE Power-
Down Current
CMOS
Inputs
Automatic CE Power-
Down Current
CMOS
Inputs
Max. V
DD
, Device Deselected,
V
IN
< 0.3V or V
IN
> V
DDQ
0.3V,
f = 0
Max. V
DD
, Device Deselected, or
V
IN
< 0.3V or V
IN
> V
DDQ
0.3V
f = f
MAX
= 1/t
CYC
I
SB3
4.0-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
All Speeds
105
100
95
85
80
mA
mA
mA
mA
mA
I
SB4
Automatic CE Power-
Down Current
TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
> V
IH
or V
IN
< V
IL
, f = 0
Shaded areas contain advance information.
相關(guān)PDF資料
PDF描述
CY7C1382CV25-225BZC 512K x 36/1M x 18 Pipelined SRAM
CY7C1382CV25-225BZI 512K x 36/1M x 18 Pipelined SRAM
CY7C1382CV25-250AC 512K x 36/1M x 18 Pipelined SRAM
CY7C1382CV25-250BGC 512K x 36/1M x 18 Pipelined SRAM
CY7C1382CV25-250BZC 512K x 36/1M x 18 Pipelined SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1382D-167AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 3.3V COM 1CD Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1382D-167AXC 制造商:Cypress Semiconductor 功能描述:IC SRAM 18MBIT PARALLEL 3.4NS TQFP100
CY7C1382D-167AXCT 功能描述:IC SRAM 18MBIT 167MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1382D-200AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 3.3V COM 1CD Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1382D-200AXCT 功能描述:IC SRAM 18MBIT 200MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2