參數(shù)資料
型號(hào): CY7C1382CV25-200BZC
廠(chǎng)商: CYPRESS SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: 512K x 36/1M x 18 Pipelined SRAM
中文描述: 1M X 18 CACHE SRAM, 3 ns, PBGA165
封裝: 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
文件頁(yè)數(shù): 10/33頁(yè)
文件大?。?/td> 537K
代理商: CY7C1382CV25-200BZC
CY7C1380CV25
CY7C1382CV25
PRELIMINARY
Document #: 38-05240 Rev. *A
Page 10 of 33
Cycle Descriptions
[1, 2, 3, 4]
Next Cycle
Add. Used
ZZ
CE
3
CE
2
CE
1
ADSP
ADSC
ADV
OE
DQ
Write
Unselected
None
0
X
X
1
X
0
X
X
Hi-Z
X
Unselected
None
0
1
X
0
0
X
X
X
Hi-Z
X
Unselected
None
0
X
0
0
0
X
X
X
Hi-Z
X
Unselected
None
0
1
X
0
1
0
X
X
Hi-Z
X
Unselected
None
0
X
0
0
1
0
X
X
Hi-Z
X
Begin Read
External
0
0
1
0
0
X
X
X
Hi-Z
X
Begin Read
External
0
0
1
0
1
0
X
X
Hi-Z
Read
Continue Read
Next
0
X
X
X
1
1
0
1
Hi-Z
Read
Continue Read
Next
0
X
X
X
1
1
0
0
DQ
Read
Continue Read
Next
0
X
X
1
X
1
0
1
Hi-Z
Read
Continue Read
Next
0
X
X
1
X
1
0
0
DQ
Read
Suspend Read
Current
0
X
X
X
1
1
1
1
Hi-Z
Read
Suspend Read
Current
0
X
X
X
1
1
1
0
DQ
Read
Suspend Read
Current
0
X
X
1
X
1
1
1
Hi-Z
Read
Suspend Read
Current
0
X
X
1
X
1
1
0
DQ
Read
Begin Write
Current
0
X
X
X
1
1
1
X
Hi-Z
Write
Begin Write
Current
0
X
X
1
X
1
1
X
Hi-Z
Write
Begin Write
External
0
0
1
0
1
0
X
X
Hi-Z
Write
Continue Write
Next
0
X
X
X
1
1
0
X
Hi-Z
Write
Continue Write
Next
0
X
X
1
X
1
0
X
Hi-Z
Write
Suspend Write
Current
0
X
X
X
1
1
1
X
Hi-Z
Write
Suspend Write
Current
0
X
X
1
X
1
1
X
Hi-Z
Write
ZZ
sleep
None
1
X
X
X
X
X
X
X
Hi-Z
X
Notes:
1.
2.
3.
4.
X =
Don't Care,
1 = HIGH, 0 = LOW.
Write is defined by BWE, BW
, and GW. See Write Cycle Descriptions table.
The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
CE
1
, CE
2
and CE
3
are available only in the TQFP package. The BGA package has a single chip select, CE
1
.
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CY7C1382CV25-200BZI 512K x 36/1M x 18 Pipelined SRAM
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