- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378501 > CY7C1363B-117BGC (CYPRESS SEMICONDUCTOR CORP) 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM PDF資料下載
參數(shù)資料
| 型號： | CY7C1363B-117BGC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM |
| 中文描述： | 512K X 18 CACHE SRAM, 7.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
| 文件頁數(shù)： | 1/34頁 |
| 文件大?。?/td> | 856K |
| 代理商： | CY7C1363B-117BGC |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁
9-Mbit (256K x 36/512K x 18)
Flow-Through SRAM
CY7C1361B
CY7C1363B
Cypress Semiconductor Corporation
Document #: 38-05302 Rev. *B
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised April 20, 2004
Features
Supports 133-MHz bus operations
256K X 36/512K X 18 common I/O
3.3V –5% and +10% core power supply (V
DD
)
2.5V or 3.3V I/O supply (V
DDQ
)
Fast clock-to-output times
—6.5 ns (133-MHz version)
—7.5 ns (117-MHz version)
—8.5 ns (100-MHz version)
Provide high-performance 2-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-ball fBGA packages
— Both 2 and 3 Chip Enable Options for TQFP
JTAG boundary scan for BGA and fBGA packages
“ZZ” Sleep Mode option
Functional Description
[1]
The CY7C1361B/CY7C1363B is a 3.3V, 256K x 36 and 512K
x 18 Synchronous Flow through SRAMs, respectively
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
2
and
CE
3[2]
), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW
x
,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
The CY7C1361B/CY7C1363B allows either interleaved or
linear burst sequences, selected by the MODE input pin. A
HIGH selects an interleaved burst sequence, while a LOW
selects a linear burst sequence. Burst accesses can be
initiated with the Processor Address Strobe (ADSP) or the
cache Controller Address Strobe (ADSC) inputs. Address
advancement is controlled by the Address Advancement
(ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1361B/CY7C1363B operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
133 MHz
6.5
250
30
117 MHz
7.5
220
30
100 MHz
8.5
180
30
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Notes:
1. For best–practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
is for A version of TQFP (3 Chip Enable Option) and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1364B | 9-Mb (256K x 32) Pipelined Sync SRAM(9-Mb (256K x 32)管道式同步SRAM) |
| CY7C1380BV25-133BGC | 512K x 36 / 1 Mb x 18 Pipelined SRAM |
| CY7C1382BV25-150AC | 512K x 36 / 1 Mb x 18 Pipelined SRAM |
| CY7C1382BV25-150BGC | FUSE, FAST ACTING, 250MA; Current, fuse rating:250mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes |
| CY7C1382BV25-166AC | FUSE, FAST ACTING, 2A; Current, fuse rating:2A; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse type, RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1363B-117BGCT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1363B-117BGI | 制造商:Rochester Electronics LLC 功能描述:8M- 512KX18 3.3V FLOW-THROUGH-SYNCHRONOUS SRAM - Bulk |
| CY7C1363C-133AJXC | 功能描述:靜態(tài)隨機(jī)存取存儲器 512Kx18 3.3V COM Sync FT 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1363C-133AJXCKJ | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1363C-133AJXCT | 功能描述:IC SRAM 9MBIT 133MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。