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參數(shù)資料
| 型號(hào)： | CY7C1356CV25-166BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| 中文描述： | 512K X 18 ZBT SRAM, 3.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 28/28頁 |
| 文件大?。?/td> | 444K |
| 代理商： | CY7C1356CV25-166BZC |
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CY7C1354CV25
CY7C1356CV25
Document #: 38-05537 Rev. *H
Page 28 of 28
Document History Page
Document Title: CY7C1354CV25/CY7C1356CV25 9-Mbit (256K x 36/512K x 18)
Pipelined SRAM with NoBL Architecture
Document Number: 38-05537
Orig. of
Change
**
242032
See ECN
RKF
*A
278969
See ECN
RKF
*B
284929
See ECN
RKF
VBL
REV.
ECN No.
Issue Date
Description of Change
New data sheet
Changed Boundary Scan order to match the B Rev of these devices
Included DC Characteristics Table
Changed ISB1 and ISB3 from DC Characteristic table as follows:
ISB1: 225 MHz -> 130 mA, 200 MHz -> 120 mA, 167 MHz -> 110 mA
ISB3: 225 MHz -> 120 mA, 200 MHz -> 110 mA, 167 MHz -> 100 mA
Changed IDDZZ to 50mA.
Added BG and BZ pkg lead-free part numbers to ordering info section.
Changed frequency of 225 MHz into 250 MHz
Added t
CYC
of 4.0 ns for 250 MHz
Changed
Θ
JA
and
Θ
JC
for TQFP Package
from 25 and 9
°
C/W to 29.41 and
6.13
°
C/W respectively
Changed
Θ
JA
and
Θ
JC
for BGA Package
from 25 and 6
°
C/W to 34.1 and
14.0
°
C/W respectively
Changed
Θ
JA
and
Θ
JC
for FBGA Package
from 27 and 6
°
C/W to 16.8 and
3.0
°
C/W respectively
Modified address expansion as per JEDEC Standard
Removed comment of Lead-free BG and BZ packages availability
Unshaded 200 and 166 MHz speed bin in the AC/DC Table and Selection
Guide
Added Address Expansion pins in the Pin Definition Table
Removed description of Extest Output Bus Tri-state on page # 11
Modified V
OL
, V
OH
test conditions
Updated Ordering Information Table
Changed from Preliminary to Final
Changed I
SB2
from 35 to 40 mA
Removed Shading on 250MHz Speed Bin in Selection Guide and AC/DC
Table
Updated Ordering Information Table
Modified test condition in note# 15 from V
DDQ
< V
DD
to
V
DDQ
≤
V
DD
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed three-state to tri-state.
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in
the Electrical Characteristics Table.
Replaced Package Name column with Package Diagram in the Ordering
Information table.
Updated the Ordering Information Table.
Added the Maximum Rating for Supply Voltage on V
DDQ
Relative to GND
Changed t
TH
, t
TL
from 25 ns to 20 ns and t
TDOV
from 5 ns to 10 ns in TAP
AC Switching Characteristics table.
Updated the Ordering Information table.
*C
323636
See ECN
PCI
*D
332879
See ECN
PCI
*E
357258
See ECN
PCI
*F
*G
377095
408298
See ECN
See ECN
PCI
RXU
*H
501793
See ECN
VKN
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1356CV25-166BZI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356CV25-166BZXC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356CV25-166BZXI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356CV25-200AXC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356CV25-200AXI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1356CV25-166CKJ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1356CV25-200AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1356CV25-200AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1356CV25-250AXC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1356S-166AXC | 功能描述:IC SRAM 9MB SYNC 100-TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
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