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參數(shù)資料
| 型號： | CY7C1356CV25-166BGC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| 中文描述： | 512K X 18 ZBT SRAM, 3.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 |
| 文件頁數(shù)： | 16/28頁 |
| 文件大?。?/td> | 444K |
| 代理商： | CY7C1356CV25-166BGC |
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CY7C1354CV25
CY7C1356CV25
Document #: 38-05537 Rev. *H
Page 16 of 28
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +3.6V
Supply Voltage on V
DDQ
Relative to GND ......–0.5V to +V
DD
DC to Outputs in Tri-State................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Electrical Characteristics
Over the Operating Range
[14, 15]
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
DD
/
V
DDQ
2.5V ± 5%
Parameter
V
DD
V
DDQ
V
OH
V
OL
V
IH
V
IL
I
X
Description
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[14]
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
SS
Test Conditions
Min.
2.375
2.375
2.0
Max.
2.625
V
DD
Unit
V
V
V
V
V
V
μ
A
for 2.5V I/O
for 2.5V I/O, I
OH
=
1.0 mA
for 2.5V I/O, I
OL
= 1.0 mA
for 2.5V I/O
for 2.5V I/O
GND
≤
V
I
≤
V
DDQ
0.4
1.7
–0.3
–5
V
DD
+ 0.3V
0.7
5
–30
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
5
Input Current of ZZ
–5
30
5
250
220
180
130
120
110
40
I
OZ
I
DD
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
Operating Supply
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
–5
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speed grades
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX
=
1/t
CYC
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
0.3V,
f = 0
Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
0.3V,
f = f
MAX
= 1/t
CYC
I
SB3
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speed grades
120
110
100
40
mA
mA
mA
mA
I
SB4
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = 0
Notes:
14.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC)> –2V (Pulse width less than t
CYC
/2).
15.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
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| CY7C1356CV25-166BGI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356CV25-166BGXC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356CV25-166BGXI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356CV25-166BZC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356CV25-166BZI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1356CV25-166CKJ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1356CV25-200AXC | 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1356CV25-200AXCT | 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1356CV25-250AXC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1356S-166AXC | 功能描述:IC SRAM 9MB SYNC 100-TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
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