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參數(shù)資料
| 型號： | CY7C1354CV25-167BGC |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture |
| 中文描述： | 9兆位（256 × 36/512K × 18）流水線的SRAM的總線延遲，TM架構(gòu) |
| 文件頁數(shù)： | 12/25頁 |
| 文件大小： | 353K |
| 代理商： | CY7C1354CV25-167BGC |
PRELIMINARY
CY7C1354CV25
CY7C1356CV25
Document #: 38-05537 Rev. *B
Page 12 of 25
pre-set HIGH to enable the output when the device is
powered-up, and also when the TAP controller is in the
“Test-Logic-Reset” state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
TAP AC Switching Characteristics
Over the Operating Range
[11, 12]
Parameter
Clock
t
TCYC
t
TF
t
TH
t
TL
Output Times
t
TDOV
t
TDOX
Set-up Times
t
TMSS
t
TDIS
t
CS
Hold Times
t
TMSH
t
TDIH
t
CH
Notes:
11. t
and t
refer to the set-up and hold time requirements of latching data from the boundary scan register.
12.Test conditions are specified using the load in TAP AC test Conditions. t
R
/t
F
= 1ns.
Description
Min.
Max.
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
ns
20
25
25
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
5
ns
ns
0
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
5
5
5
ns
ns
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
5
5
5
ns
ns
ns
tTL
Test Clock
(TCK)
1
2
3
4
5
6
Test Mode Select
(TMS)
tTH
Test Data-Out
(TDO)
tCYC
Test Data-In
(TDI)
tTMSH
tTMSS
tTDIH
tTDIS
tTDOX
tTDOV
DON’T CARE
UNDEFINED
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| CY7C1354CV25-167BGI | 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1354CV25-200AXC | 功能描述:靜態(tài)隨機存取存儲器 256Kx36 2.5V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1354CV25-200AXCT | 功能描述:IC SRAM 9MBIT 200MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:NoBL™ 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1354CV25-200BZC | 制造商:Cypress Semiconductor 功能描述:CY7C1354CV25 9 Mb (256 K x 36) 200 MHz 2.5 V Pipelined SRAM - BGA-165 制造商:Cypress Semiconductor 功能描述:CY7C1354CV25 9 Mb (256 K x 36) 200 MHz 2.5 V Pipelined SRAM - FBGA-165 |
| CY7C1354CV25-200CKJ | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1354D-200BZC | 制造商:Cypress Semiconductor 功能描述:SYNC SRAMS - Trays 制造商:Cypress Semiconductor 功能描述:IC SRAM 9MBIT 200MHZ 165FBGA |
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