- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379065 > CY7C1354C-166BGC (CYPRESS SEMICONDUCTOR CORP) 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1354C-166BGC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| 中文描述： | 256K X 36 ZBT SRAM, 3.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
| 文件頁數(shù)： | 28/28頁 |
| 文件大?。?/td> | 467K |
| 代理商： | CY7C1354C-166BGC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁當(dāng)前第28頁
CY7C1354C
CY7C1356C
Document #: 38-05538 Rev. *G
Page 28 of 28
Document History Page
Document Title: CY7C1354C/CY7C1356C 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture
Document Number: 38-05538
Orig. of
Change
**
242032
See ECN
RKF
New data sheet
*A
278130
See ECN
RKF
Changed Boundary Scan order to match the B Rev of these devices
Changed TQFP pkg to Lead-free TQFP in Ordering Information section
Added comment of Lead-free BG and BZ packages availability
*B
284431
See ECN
VBL
Changed ISB1 and ISB3 from DC Characteristic table as follows
ISB1: 225 mA-> 130 mA, 200 MHz -> 120 mA, 167 MHz -> 110 mA
ISB3: 225 MHz -> 120 mA, 200 MHz -> 110 mA, 167 MHz -> 100 mA
Add BG and BZ pkg lead-free part numbers to ordering info section
*C
320834
See ECN
PCI
Changed 225 MHz to 250 MHz
Address expansion pins/balls in the pinouts for all packages are modified as
per JEDEC standard
Unshaded frequencies of 250, 200, 166 MHz in AC/DC Tables and Selection
Guide
Changed
Θ
JA
and
Θ
JC
for TQFP Package
from 25 and 9
°
C/W to 29.41 and
6.13
°
C/W respectively
Changed
Θ
JA
and
Θ
JC
for BGA Package
from 25 and 6
°
C/W to 34.1 and
14.0
°
C/W respectively
Changed
Θ
JA
and
Θ
JC
for FBGA Package
from 27 and 6
°
C/W to 16.8 and
3.0
°
C/W respectively
Modified V
OL,
V
OH
test conditions
Added Lead-Free product information
Updated Ordering Information Table
Changed from Preliminary to Final
*D
351895
See ECN
PCI
Changed I
SB2
from 35 to 40 mA
Updated Ordering Information Table
*E
377095
See ECN
PCI
Modified test condition in note# 15 from V
DDQ
< V
DD
to
V
DDQ
≤
V
DD
*F
408298
See ECN
RXU
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed three-state to tri-state.
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in
the Electrical Characteristics Table.
Replaced Package Name column with Package Diagram in the Ordering
Information table.
*G
501793
See ECN
VKN
Added the Maximum Rating for Supply Voltage on V
DDQ
Relative to GND
Changed t
TH
, t
TL
from 25 ns to 20 ns and t
TDOV
from 5 ns to 10 ns in TAP
AC Switching Characteristics table.
Updated the Ordering Information table.
REV.
ECN No.
Issue Date
Description of Change
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1354C-166BGI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354C-166BGXC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354C-166BGXI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354C-166BZC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354C-166BZI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1354C-166BGCMG | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1354C-166BGCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync PL COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1354C-166BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync PL COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1354C-166BZCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync PL COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1354C-167AXC | 功能描述:IC SRAM 9MBIT 167MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。