- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379065 > CY7C1354C-166BGC (CYPRESS SEMICONDUCTOR CORP) 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1354C-166BGC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| 中文描述： | 256K X 36 ZBT SRAM, 3.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
| 文件頁數(shù)： | 19/28頁 |
| 文件大?。?/td> | 467K |
| 代理商： | CY7C1354C-166BGC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
CY7C1354C
CY7C1356C
Document #: 38-05538 Rev. *G
Page 19 of 28
Switching Characteristics
Over the Operating Range
[18, 19]
Parameter
t
Power[17]
Clock
t
CYC
F
MAX
t
CH
t
CL
t
EOV
t
CLZ
Output Times
t
CO
t
EOV
t
DOH
t
CHZ
t
CLZ
t
EOHZ
t
EOLZ
Set-up Times
t
AS
t
DS
t
CENS
t
WES
t
ALS
t
CES
Hold Times
t
AH
t
DH
t
CENH
t
WEH
t
ALH
t
CEH
Description
–250
–200
–166
Unit
ms
Min.
1
Max.
Min.
1
Max.
Min.
1
Max.
V
CC
(typical) to the First Access Read or Write
Clock Cycle Time
Maximum Operating Frequency
Clock HIGH
Clock LOW
OE LOW to Output Valid
Clock to Low-Z
[20, 21, 22]
4.0
5
6
ns
MHz
ns
ns
ns
ns
250
200
166
1.8
1.8
2.0
2.0
2.4
2.4
2.8
3.2
3.5
1.25
1.5
1.5
Data Output Valid after CLK Rise
OE LOW to Output Valid
Data Output Hold after CLK Rise
Clock to High-Z
[20, 21, 22]
Clock to Low-Z
[20, 21, 22]
OE HIGH to Output High-Z
[20, 21, 22]
OE LOW to Output Low-Z
[20, 21, 22]
2.8
2.8
3.2
3.2
3.5
3.5
ns
ns
ns
ns
ns
ns
ns
1.25
1.25
1.25
1.5
1.5
1.5
1.5
1.5
1.5
2.8
3.2
3.5
2.8
3.2
3.5
0
0
0
Address Set-up before CLK Rise
Data Input Set-up before CLK Rise
CEN Set-up before CLK Rise
1.4
1.4
1.4
1.4
1.4
1.4
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
ns
ns
ns
ns
ns
ns
WE, BW
x
Set-up before CLK Rise
ADV/LD Set-up before CLK Rise
Chip Select Set-up
Address Hold after CLK Rise
Data Input Hold after CLK Rise
CEN Hold after CLK Rise
WE, BW
x
Hold after CLK Rise
ADV/LD Hold after CLK Rise
Chip Select Hold after CLK Rise
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
Notes:
17.This part has a voltage regulator internally; t
power
is the time power needs to be supplied above V
DD
minimum initially, before a Read or Write operation can be
initiated.
18.Timing reference level is 1.5V when V
= 3.3V and is 1.25V when V
DDQ
= 2.5V.
19.Test conditions shown in (a) of AC Test Loads unless otherwise noted.
20.t
, t
, t
, and t
are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
21.At any given voltage and temperature, t
is less than t
and t
is less than t
to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
22.This parameter is sampled and not 100% tested.
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1354C-166BGI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354C-166BGXC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354C-166BGXI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354C-166BZC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1354C-166BZI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1354C-166BGCMG | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1354C-166BGCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync PL COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1354C-166BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync PL COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1354C-166BZCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 3.3V NoBL Sync PL COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1354C-167AXC | 功能描述:IC SRAM 9MBIT 167MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:NoBL™ 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。