參數(shù)資料
型號(hào)： CY7C1353F-133AC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
中文描述： 256K X 18 ZBT SRAM, 6.5 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁數(shù)： 7/13頁
文件大小： 324K
代理商： CY7C1353F-133AC
CY7C1353F
Document #: 38-05212 Rev. *B
Page 7 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +4.6V
DC Voltage Applied to Outputs
in three-state....................................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Electrical Characteristics
Over the Operating Range
[9,10]
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Com’l
Ind’l
Ambient
Temperature (T
A
)
0°C to +70°C
40°C to +85°C
V
DD
V
DDQ
3.3V – 5%/+10% 2.5V – 5% to
V
DD
Parameter
V
DD
V
DDQ
V
OH
Description
Test Conditions
Min.
3.135
2.375
2.4
2.0
Max.
3.6
V
DD
Unit
V
V
V
V
V
V
V
V
V
V
μ
A
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –1.0 mA
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= 1.0 mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
GND
≤
V
I
≤
V
DDQ
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
Input HIGH Voltage
Input LOW Voltage
[9]
Input LOW Voltage
[9]
Input Load Current
(except ZZ and MODE)
Input Current of MODE
2.0
1.7
–0.3
–0.3
5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
I
X
Input = V
SS
Input = V
DD
Input = V
SS
Input = V
DD
GND
≤
V
I
≤
V
DD
, Output Disabled
–30
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
5
Input Current of ZZ
–5
30
5
–300
225
220
205
195
90
85
80
60
40
I
OZ
I
OS
I
DD
Output Leakage Current
Output Short Circuit Current V
DD
= Max., V
OUT
= GND
V
DD
Operating Supply
Current
–5
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
7.5-ns cycle, 133 MHz
8.5-ns cycle, 117 MHz
10-ns cycle, 100 MHz
15-ns cycle, 66 MHz
7.5-ns cycle, 133 MHz
8.5-ns cycle, 117 MHz
10-ns cycle, 100 MHz
15-ns cycle, 66 MHz
All speeds
I
SB1
Automatic CE Power-down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX
,
inputs switching
I
SB2
Automatic CE Power-down
Current—CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
≥
V
DD
– 0.3V or V
IN
≤
0.3V,
f = 0, inputs static
Shaded areas contain advance information.
Notes:
9. Overshoot: V
IH
(AC) < V
DD
+1.5V (Pulse width less than t
CYC
/2), undershoot: V
IL
(AC)> -2V (Pulse width less than t
CYC
/2).
10.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
相關(guān)PDF資料
PDF描述
CY7C1353F-133AI 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
CY7C1353F-66AC 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
CY7C1353F-66AI 4-Mb (256K x 18) Flow-through SRAM with NoBL Architecture
CY7C1354CV25-167AXC 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1356CV25-225AXC 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1353G-100AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx18 3.3V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1353G-100AXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx18 3.3V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1353G-133AXC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1353S-100AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 CY7C1353S-100AXC RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1353S-100AXCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 CY7C1353S-100AXCT RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*