- 您現在的位置：買賣IC網 > PDF目錄378497 > CY7C128A (Cypress Semiconductor Corp.) 2K x 8 Static RAM(2K x 8 靜態(tài) RAM) PDF資料下載
參數資料
| 型號： | CY7C128A |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2K x 8 Static RAM(2K x 8 靜態(tài) RAM) |
| 中文描述： | 2K × 8靜態(tài)RAM（2K × 8靜態(tài)RAM）的 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 184K |
| 代理商： | CY7C128A |
2K x 8 Static RAM
CY7C128A
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
February 3, 2000
Features
Automatic power-down when deselected
CMOS for optimum speed/power
High speed
—15 ns
Low active power
—660 mW (commercial)
—688 mW (military—20 ns)
Low standby power
—110 mW (20 ns)
TTL-compatible inputs and outputs
Capable of withstanding greater than 2001V electrostat-
ic discharge
V
IH
of 2.2V
Functional Description
The CY7C128A is a high-performance CMOS static RAM or-
ganized as 2048 words by 8 bits. Easy memory expansion is
provided by an active LOW Chip Enable (CE), and active LOW
Output Enable (OE) and three-state drivers. The CY7C128A
has an automatic power-down feature, reducing the power
consumption by 83% when deselected.
Writing to the device is accomplished when the Chip Enable
(CE) and Write Enable (WE) inputs are both LOW.
Data on the eight I/O pins (I/O
0
through I/O
7
) is written into the
memory location specified on the address pins (A
0
through
A
10
).
Reading the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while Write Enable (WE)
remains HIGH. Under these conditions, the contents of the
memory location specified on the address pins will appear on
the eight I/O pins.
The I/O pins remain in high-impedance state when Chip En-
able (CE) or Output Enable (OE) is HIGH or Write Enable (WE)
is LOW.
The CY7C128A utilizes a die coat to insure alpha immunity.
Logic Block Diagram
Pin Configurations
C128A–1
A
1
A
2
A
4
A
5
A
6
COLUMN
DECODER
R
S
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
I/O
1
I/O
2
I/O
3
Top View
LCC
1
2
3
4
5
6
7
8
9
10
11
12
14
13
15
16
20
19
18
17
21
24
23
22
Top View
DIP/SOJ/SOIC
A
6
A
5
A
4
A
3
A
2
A
1
A
0
WE
OE
V
CC
A
8
A
9
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
C128A–2
A
7
I/O
0
I/O
1
I/O
2
GND
128 x 16 x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
7C128A
A
0
C128A–3
A
3
A
7
A
8
A
9
A
10
24
4
5
6
7
8
9
10
3 2 1
23
11 12 13 14 15
22
21
20
19
18
17
16
A
V
7C128A
A
2
I
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
WE
OE
A
10
CE
I/O
7
I/O
6
A
9
3
I
4
I
5
I
G
A
A
Selection Guide
7C128A-15
15
120
-
40
-
7C128A-20
20
120
125
20
20
7C128A-25
25
120
125
20
20
7C128A-35
35
120
125
20
20
7C128A-45
45
120
125
20
20
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Commercial
Military
Commercial
Military
Maximum Standby
Current (mA)
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1313BV18 | 18-Mbit QDR-II SRAM 4-Word Burst Architecture(4字Burst結構,18-Mbit QDR-II SRAM) |
| CY7C1315BV18 | 18-Mbit QDR-II SRAM 4-Word Burst Architecture(4字Burst結構,18-Mbit QDR-II SRAM) |
| CY7C1318AV18 | 18-Mbit DDR-II SRAM 2-Word Burst Architecture(18-Mb DDR-II SRAM（2-Word Burst結構）) |
| CY7C1316AV18 | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1316AV18-167BZC | 18-Mbit DDR-II SRAM 2-Word Burst Architecture |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C128A-15PC | 功能描述:IC SRAM 16KBIT 15NS 24DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| CY7C128A-15VC | 功能描述:IC SRAM 16KBIT 15NS 24SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| cy7c128a-15vct | 制造商:Cypress Semiconductor 功能描述: |
| CY7C128A-20SCT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| CY7C128A-20VC | 功能描述:IC SRAM 16KBIT 20NS 24SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
發(fā)布緊急采購，3分鐘左右您將得到回復。