參數(shù)資料
型號(hào)： CY7C1165V18-333BZXI
廠(chǎng)商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
中文描述： 512K X 36 QDR SRAM, 0.45 ns, PBGA165
封裝： 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FPBGA-165
文件頁(yè)數(shù)： 29/29頁(yè)
文件大小： 956K
代理商： CY7C1165V18-333BZXI
Document Number: 001-06582 Rev. *C
Revised June 15, 2007
Page 29 of 29
QDR is a trademark of Cypress Semiconductor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All
product and company names mentioned in this document are the trademarks of their respective holders.
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document History Page
Document Title: CY7C1161V18/CY7C1176V18/CY7C1163V18/CY7C1165V18, 18-Mbit QDR-II+ SRAM 4-Word Burst Archi-
tecture (2.5 Cycle Read Latency)
Document Number: 001-06582
Orig. of
Change
**
430351
See ECN
NXR
New data sheet
*A
461654
See ECN
NXR
Revised the MPNs from
CY7C1176BV18 to CY7C1176V18
CY7C1163BV18 to CY7C1163V18
CY7C1165BV18 to CY7C1165V18
Changed t
TH
and t
TL
from 40 ns to 20 ns, changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
, t
TDIH
,
t
CH
from
10 ns to 5 ns and changed t
TDOV
from 20 ns to 10 ns in TAP AC
Switching Characteristics table
Modified power up waveform
*B
497629
See ECN
NXR
Changed the V
DDQ
operating voltage to 1.4V to V
DD
in the Features section, in
Operating Range table and in the DC Electrical Characteristics table
Added foot note in page 1
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10°C to +85°C to –55°C to +125°C
Changed V
REF
(max) spec from 0.85V to 0.95V in the DC Electrical Character-
istics table and in the note below the table
Updated foot note 22 to specify Overshoot and Undershoot Spec
Updated
Θ
JA
and
Θ
JC
values
Removed x9 part and its related information
Updated footnote 25
*C
1167806
See ECN
VKN/KKVTMP Converted from preliminary to final
Added x8 and x9 parts
Changed I
DD
values from 800 mA to 1080 mA for 400 MHz, 766 mA to 1020 mA
for 375 MHz, 708 mA to 920 mA for 333 MHz, 663 mA to 850 mA for 300 MHz
Changed I
SB
values from 235 mA to 300 mA for 400 MHz, 227 mA to 290 mA
for 375 MHz, 212 mA to 260 mA for 333 MHz, 201 mA to 250 mA for 300 MHz
Changed t
CYC(max)
spec to 8.4 ns for all speed bins
Changed
Θ
JA
value from 13.48 °C/W to 17.2 °C/W
Updated Ordering Information table
REV.
ECN No.
Issue Date
Description of Change
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1176V18 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-300BZC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-300BZI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-300BZXC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1176V18-300BZXI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1165V18-400BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18M Q+, B4 2.5 LATENCY RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1165XC 制造商:Cypress Semiconductor 功能描述:
CY7C11681KV18-400BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb x 18 400 MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C11681KV18-400BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb x 18 400 MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C11681KV18-450BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb x 18 450 MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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